Flexible High Voltage Thin Film Transistor with Ring-Shaped Gate
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Solution Overview
Problem
Conventional power controllers for wearable electronics are bulky, rigid, and require external wiring, making them unsuitable for integration with nano-generators on flexible substrates, which is necessary for self-powered wearable systems that require efficient power management and minimal environmental impact.
Innovation Solution
A flexible high voltage thin film transistor (f-HVTFT) with a bottom gate configuration is fabricated on a flexible substrate, featuring a ring-shaped gate and semiconductor channel, and multiple connections for enhanced strength and stability, allowing integration with nano-generators for efficient power management without external wiring.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If conventional power controllers are used for wearable electronics, then power management function is achieved, but the device becomes bulky and rigid requiring external wiring
Solution Approach 1:
The patent integrates the power controller directly onto the flexible substrate with the nano-generator, merging previously separate components (power controller, nano-generator, and substrate) into a single integrated device. This eliminates external wiring and reduces overall device complexity while maintaining power management functionality.
Solution Approach 2:
The patent employs flexible thin-film transistor technology to construct the power controller on a flexible substrate, replacing rigid conventional controllers. This enables the device to be bent and conform to wearable applications while eliminating the need for external wiring connections.
2Ease of operation
If conventional power controllers with external wiring are used, then power management is achieved, but user experience is degraded
Solution Approach 1:
The power controller and nano-generator are integrated on a single flexible substrate, eliminating external wiring connections. This merging of components simplifies the device structure and improves user experience by removing cumbersome wiring requirements.
3Adaptability or versatility
If high voltage transistor is fabricated on flexible substrate at low temperature, then flexibility and transparency are achieved, but manufacturing process constraints increase
Solution Approach 1:
The patent modifies the fabrication process parameters to enable low-temperature deposition and processing compatible with flexible substrates. This includes using low-temperature deposition techniques and optimizing process conditions to achieve functional high-voltage transistors on temperature-sensitive flexible materials.
Solution Approach 2:
The patent employs composite material structures, including flexible substrate materials combined with thin-film transistor layers, to achieve both flexibility and electrical functionality. The multi-layer composite structure enables low-temperature processing while maintaining device performance.
Data Source
AI summary
Embodiments are directed to a flexible high voltage thin film transistor (f-HVTFT) with a center-symmetric circular configuration. The f-HVTFT includes a ring-shaped oxide semiconductor channel, a ring-shaped gate, a ring-shaped source, and a circular drain. The source and gate each have multiple connections to respective electrode pads, enabling stable and identical electrical characteristics and blocking voltage while the f-HVTFT is subject to bending from random directions. The f-HVTFT enables a high blocking voltage over 100 V, on-current over 100 μA, and low off-current of 0.1 pA, which makes it suitable for power management of self-powered wearable electronic systems.