Flexible Memory Array Self-Refresh with Bank-Specific Regions

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Solution Overview

Problem

Existing memory devices face suboptimal refresh operations and increased power consumption due to using a single, uniform refresh region for all memory banks, leading to unnecessary refreshes and overprovisioning.

Innovation Solution

Implementing a memory device that tracks memory row addresses for each bank, determining individual refresh regions based on access patterns, and selectively performing refresh operations only on actively used memory rows, thereby optimizing power usage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a single uniform refresh region is used for all memory banks, then the refresh operation is simple to implement, but power consumption increases due to unnecessary refreshes and overprovisioning

Engineering Contradiction:
Improverefresh operation complexityVSAvoidpower consumption
Core Design Contradiction:
Device complexityVSUse of energy by moving object

Solution Approach 1:

The patent divides the refresh operation into bank-specific segments by tracking individual memory row addresses for each memory bank and determining separate refresh regions. This segmentation allows each memory bank to be refreshed independently based on its actual usage patterns, eliminating unnecessary refreshes in inactive banks and reducing overall power consumption while maintaining manageable complexity through automated address tracking.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent implements dynamic refresh region determination by continuously tracking memory row addresses accessed by each memory bank and adapting the refresh region boundaries based on actual access patterns. This dynamic approach replaces the static uniform refresh region with flexible, usage-driven regions that expand or contract according to real-time memory access behavior, optimizing power consumption without requiring complex manual configuration.

Inventive Principle:
Principle #15Dynamics

2Ease of manufacture

If a single uniform refresh region is used for all memory banks, then the implementation is straightforward, but refresh operations become inefficient due to overprovisioning

Engineering Contradiction:
Improveimplementation easeVSAvoidrefresh operation efficiency
Core Design Contradiction:
Ease of manufactureVSProductivity

Solution Approach 1:

The patent enables the memory device to self-optimize its refresh operations by automatically tracking memory row addresses and determining appropriate refresh regions without external intervention. The system monitors its own access patterns and adapts the refresh strategy accordingly, eliminating the need for complex external control while achieving efficient, tailored refresh operations for each memory bank.

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The patent implements feedback mechanisms where the memory device continuously monitors memory access patterns, uses this information to determine refresh regions, and adjusts refresh operations accordingly. This closed-loop feedback system allows the memory device to learn from actual usage behavior and optimize its refresh strategy, improving efficiency while keeping the implementation relatively simple through automated control.

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS12424259B2Techniques for flexible self-refresh of memory arrays
Publication Date: 2025.09.23 MICRON TECHNOLOGY INC
  • US12424259B2 patent drawing
  • US12424259B2 patent drawing
  • US12424259B2 patent drawing

AI summary

Methods, systems, and devices for techniques for flexible self-refresh of memory arrays are described. A memory system may set a respective refresh region for each respective memory bank of the memory system by tracking access to memory row addresses in respective memory banks used in the respective memory banks. For example, the memory system may monitor respective access commands issued to each respective memory bank and store information in a register of each respective memory bank. The memory system may determine whether a respective memory row address associated with a respective access command is within the respective refresh region and process the respective memory bank. The memory system may update a value stored in a register of the respective memory bank (e.g., a memory row address value) to adjust the refresh region of the respective memory bank without updating refresh regions for other memory banks in the memory system.