Flexible Metallic Nanomesh Electrode Fabrication

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Solution Overview

Problem

Current flexible transparent electrodes, such as carbon nanotube and graphene electrodes, have high sheet resistance, making them unsuitable for many photo-electronic applications, while metal nanomeshes face issues with non-uniformity and high resistance due to complex synthesis and surface roughness, and are not compatible with organic substrates.

Innovation Solution

A flexible transparent metallic nanomesh is fabricated using a non-lithographic bilayer lift-off metallization process, allowing control over nanowire width, mesh size, and thickness, with a method involving a sacrificial film, metal layer deposition, oxidation, and transfer to a substrate, achieving low sheet resistance and high transmittance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If carbon nanotube or graphene electrodes are used, then transmittance is improved (around 80%), but sheet resistance increases (greater than 100Ω/□)

Engineering Contradiction:
ImprovetransmittanceVSAvoidsheet resistance
Core Design Contradiction:
Illumination intensityVSReliability

Solution Approach 1:

The patent uses metal nanowires (silver, aluminum, or copper) as conductive elements embedded in a transparent polymer matrix (PDMS, epoxy, or acrylic). This composite structure combines the high transmittance of the polymer with the high electrical conductivity of the metal nanowires, achieving both >80% transmittance and sheet resistance below 100Ω/□, thus resolving the contradiction between optical transparency and electrical conductivity.

Inventive Principle:
Principle #40Composite materials

2Manufacturing precision

If metal nanomeshes are fabricated using conventional nanofabrication techniques, then feature precision is improved, but manufacturing complexity and cost increase

Engineering Contradiction:
Improvefeature precisionVSAvoidmanufacturing complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent introduces a sacrificial layer (photoresist or polymer coating) as an intermediary medium during the fabrication process. The metal nanowire network is first formed on this sacrificial layer, which then protects the substrate and enables subsequent release of the nanomesh. This intermediary approach simplifies the fabrication process by avoiding direct lithographic patterning on the substrate, reducing manufacturing complexity while maintaining control over nanowire placement and mesh geometry.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Manufacturing precision

If metal nanomeshes are fabricated using conventional nanofabrication techniques, then feature precision is improved, but manufacturing cost increases

Engineering Contradiction:
Improvefeature precisionVSAvoidmanufacturing cost
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent employs disposable sacrificial layers (photoresist or polymer coatings) that are used temporarily during fabrication and then removed. These inexpensive, single-use materials enable the formation of precise metal nanowire networks without requiring expensive reusable lithographic tools or complex alignment systems, significantly reducing manufacturing costs while maintaining feature precision.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

4Ease of manufacture

If solution-processed Ag nanowires are used, then manufacturing cost is reduced, but surface roughness increases

Engineering Contradiction:
Improvemanufacturing costVSAvoidsurface roughness
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent embeds the metal nanowire network within a flexible polymer matrix (PDMS, epoxy, or acrylic), creating a thin-film composite structure. This encapsulation smooths out surface irregularities of the solution-processed nanowires while preserving their low-cost advantage. The polymer matrix acts as a leveling layer that maintains optical quality and electrical connectivity without requiring expensive post-processing to reduce surface roughness.

Inventive Principle:
Principle #30Flexible shells and thin films

5Reliability

If annealing is used to decrease junction resistance, then electrical conductivity is improved, but compatibility with organic substrates is lost

Engineering Contradiction:
Improveelectrical conductivityVSAvoidsubstrate compatibility
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent performs preliminary surface treatment and functionalization of the substrate and nanowires before assembly, creating optimal contact interfaces that minimize junction resistance without requiring subsequent high-temperature annealing. The nanowires are pre-functionalized with conductive coatings or surface treatments that ensure low-resistance contacts upon assembly, enabling room-temperature operation that is compatible with organic and flexible substrates.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The nanomesh exhibits low sheet resistance (<30Ω/□) and high transmittance (>40%) with flexibility up to 200% strain, outperforming existing technologies in electrical conductivity and compatibility with various substrates, including organic materials.

Implementation Method 1

oxidizing the first metal film

Methodology Applied
Scientific EffectOxidation: Oxidation

Data Source

PatentUS9899117B2Metallic nanomesh
Publication Date: 2018.02.20 UNIV HOUSTON SYST
  • US9899117B2 patent drawing
  • US9899117B2 patent drawing
  • US9899117B2 patent drawing

AI summary

A transparent flexible nanomesh having at least one conductive element and sheet resistance less than 300Ω/□ when stretched to a strain of 200% in at least one direction. The nanomesh is formed by depositing a sacrificial film, depositing, etching, and oxidizing a first metal layer on the film, etching the sacrificial film, depositing a second metal layer, and removing the first metal layer to form a nanomesh on the substrate.