Flexible PIN Diode Arrays for Distortion-Free Imaging
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Solution Overview
Problem
Conventional digital cameras face distortion issues due to the curvature of light as it passes through lenses, which is corrected by bulky and expensive multi-pane glass systems.
Innovation Solution
Development of flexible lateral p-i-n diodes with single-crystalline semiconductor layers on flexible substrates, arranged in polygon shapes, allowing for flexible and curved photodiode arrays that can form three-dimensional structures to address distortion without the need for bulky lens systems.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If multiple panes of glass are incorporated to correct light refraction and flatten the focusing plane, then image distortion is reduced, but the device becomes large, bulky and expensive
Solution Approach 1:
The patent removes the lens component from the imaging system entirely, extracting only the essential photodetection function. By using a flat photodetector array without lenses, the system eliminates the need for bulky multi-pane glass correction systems while maintaining acceptable image quality through direct light detection on the sensor plane
Solution Approach 2:
The patent replaces the mechanical optical correction system (multiple glass panes) with an alternative approach using flexible photodetector arrays that can be configured in three-dimensional geometries. This substitution eliminates complex mechanical lens assemblies while achieving similar optical correction through geometric arrangement of detectors
2Measurement precision
If multiple panes of glass are incorporated to correct light refraction, then image distortion is reduced, but the device becomes expensive
Solution Approach 1:
The patent extracts and eliminates the expensive lens assembly from the system, replacing it with a simple flat photodetector array. This removal of the optical correction component significantly reduces manufacturing costs while maintaining adequate image quality through alternative geometric arrangements
Solution Approach 2:
The patent changes the fundamental parameters of the imaging system by transitioning from refractive optical correction (glass panes) to geometric detector arrangement (3D flexible arrays). This parameter change enables cost-effective manufacturing using standard photodetector fabrication processes without requiring precision optical glass assembly
3Volume of moving object
If thin single-crystalline semiconductor layers are used to create flexible PIN diodes, then flexibility and compactness are improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent employs thin film semiconductor layers (a few hundred nanometers thick) deposited on flexible substrate materials. This approach enables the creation of flexible, compact PIN diodes that can be bent and configured in three-dimensional arrangements while using established thin film deposition techniques to achieve sufficient manufacturing precision
Solution Approach 2:
The patent uses composite structures combining thin single-crystalline semiconductor layers with flexible substrate materials and encapsulation layers. This composite approach provides mechanical flexibility and protection while maintaining the electrical performance of the thin semiconductor, reducing the stringency of thickness control requirements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The flexible photodiode arrays provide efficient image capture without distortion, enabling compact and cost-effective imaging solutions while maintaining high absorption efficiency and flexibility.
Implementation Method 1
the layer of single-crystalline semiconductor having a thickness no greater than about 400 nm
Data Source
AI summary
Flexible lateral p-i-n (“PIN”) diodes, arrays of flexible PIN diodes and imaging devices incorporating arrays of PIN diodes are provided. The flexible lateral PIN diodes are fabricated from thin, flexible layers of single-crystalline semiconductor. A plurality of the PIN diodes can be patterned into a single semiconductor layer to provide a flexible photodetector array that can be formed into a three-dimensional imaging device.