Flexible Thin-Film Lateral P-N Junctions for Complex Geometries

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Solution Overview

Problem

Existing semiconductor technologies face challenges in fabricating flexible p-n junctions due to the use of expensive equipment, corrosive gases, limited substrate selection, and the inflexibility of crystalline phases, which restrict their application in complex geometries.

Innovation Solution

A composite material with a thin-film layer of lateral p-n junctions is developed, where p-type and n-type regions with electrically conductive particles are dispersed in organic carriers, allowing for flexible configurations and seamless or seam interfaces, enabling the creation of flexible electronic circuits and devices.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional gas phase deposition techniques are used to fabricate p-n junctions, then crystalline phases with good electronic properties are obtained, but the deposited structures are inflexible and cannot be applied to complex geometries

Engineering Contradiction:

Improveelectronic propertiesVSAvoidgeometric flexibility

Core Design Contradiction:

ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent employs thin-film deposition to create flexible p-n junction structures that can be conformally deposited on complex geometries. The thin-film approach allows the semiconductor structures to be bent and conform to curved surfaces while maintaining functional integrity, directly resolving the contradiction between electronic performance and geometric adaptability.

Inventive Principle:

Principle #30Flexible shells and thin films

Solution Approach 2:

The patent transitions from planar p-n junction fabrication to three-dimensional conformal deposition on curved and complex surfaces. By utilizing atmospheric pressure chemical vapor deposition (APCVD), the process enables deposition in multiple dimensions and orientations, allowing p-n junctions to be formed on surfaces with complex geometries that were previously inaccessible.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

2Reliability

If crystalline phases are deposited by conventional methods, then good electronic properties are achieved, but expensive equipment and corrosive gases are required

Engineering Contradiction:

Improveelectronic propertiesVSAvoidfabrication cost and complexity

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent replaces complex vacuum-based deposition equipment with atmospheric pressure chemical vapor deposition (APCVD) equipment. This substitution eliminates the need for expensive vacuum systems while maintaining the ability to deposit high-quality crystalline semiconductor phases, thereby reducing equipment costs and simplifying the manufacturing process.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent employs a disposable susceptor design that can be easily replaced between production runs. This approach eliminates the need for expensive, complex equipment cleaning and maintenance procedures, allowing for rapid changeovers and reducing overall manufacturing costs while maintaining product quality.

Inventive Principle:

Principle #27Cheap short-living objects (Disposable)

3Reliability

If conventional deposition techniques are used, then p-n junctions can be fabricated, but long deposition times are required

Engineering Contradiction:

Improvejunction qualityVSAvoiddeposition speed

Core Design Contradiction:

ReliabilityVSProductivity

Solution Approach 1:

The patent employs periodic pulsed deposition cycles with optimized timing parameters. By using pulsed precursor delivery and controlled heating cycles, the process achieves high-quality crystalline deposition at accelerated rates, resolving the contradiction between junction quality and deposition speed.

Inventive Principle:

Principle #19Periodic action

Solution Approach 2:

The patent utilizes atmospheric pressure conditions and optimized temperature profiles to accelerate deposition rates. By changing the pressure parameter from vacuum to atmospheric and optimizing the thermal field, the process achieves faster deposition speeds while maintaining crystalline phase quality and junction performance.

Inventive Principle:

Principle #35Parameter changes

4Ease of manufacture

If limited substrate selections are used in conventional fabrication, then process simplicity is maintained, but adaptability to different geometries is restricted

Engineering Contradiction:

Improveprocess simplicityVSAvoidsubstrate geometry range

Core Design Contradiction:

Ease of manufactureVSAdaptability or versatility

Solution Approach 1:

The patent develops a universal APCVD process that can deposit p-n junctions on diverse substrate geometries including flat surfaces, curved surfaces, and complex three-dimensional structures. The same deposition process parameters can be applied across different substrate types, providing multi-functionality and eliminating the need for geometry-specific fabrication procedures.

Inventive Principle:

Principle #6Universality (Multi-functionality)

Data Source

PatentUS11678496B2Thin-film pn junctions and applications thereof

Publication Date: 2023.06.13 WAKE FOREST UNIV

AI summary

Composite materials including a thin-film layer of lateral p-n junctions can be employed in circuits or various components of electrical devices. A composite material comprises a thin-film layer including p-type regions alternating with n-type regions along a face of the thin-film layer, the p-type regions comprising electrically conductive particles dispersed in a first organic carrier and the n-type regions comprising electrically conductive particles dispersed in a second organic carrier, wherein p-n junctions are established at interfaces between the p-type and n-type regions.