Flexible Semiconductor Device Printing Manufacturing
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Solution Overview
Problem
Conventional methods for manufacturing TFT elements on glass substrates are costly, require vacuum processes, and result in heavy, inflexible display devices due to high temperature processing, making them unsuitable for portable, lightweight displays.
Innovation Solution
A method involving a printing process to form insulating films, extraction electrodes, semiconductor layers, and sealing resin layers on a resin substrate, eliminating the need for vacuum processes and high-temperature steps, allowing for flexible and lightweight semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional vacuum processes and high-temperature processing are used to manufacture TFT elements on glass substrates, then manufacturing precision and reliability are improved, but device weight increases and flexibility is lost
Solution Approach 1:
The patent changes the processing temperature parameter from high-temperature (conventional) to low-temperature (below glass transition temperature of resin substrate), enabling the use of flexible resin substrates instead of rigid glass substrates. This parameter change resolves the contradiction by allowing TFT manufacturing on flexible substrates without requiring high-temperature processes that would damage the substrate while maintaining acceptable manufacturing precision through optimized low-temperature deposition and annealing processes.
Solution Approach 2:
The patent replaces the conventional vacuum-based sputtering and evaporation processes with solution-based coating methods such as spin coating, dip coating, or inkjet printing. This substitution eliminates the need for expensive vacuum equipment and enables direct patterning of semiconductor layers on flexible substrates, reducing device weight and improving flexibility while maintaining manufacturing precision through controlled solution deposition and thermal annealing.
2Manufacturing precision
If conventional vacuum deposition processes are used to form multiple layers, then manufacturing precision is improved, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent merges multiple separate vacuum deposition processes into a single solution-based coating and annealing process. Instead of depositing each layer (insulator, semiconductor, electrode) separately in vacuum chambers, the patent uses solution-phase materials that can be coated sequentially or simultaneously, with thermal annealing serving multiple functions (solvent removal, crystallization, adhesion enhancement) in one step, thereby reducing process complexity while maintaining layer formation accuracy.
Solution Approach 2:
The patent introduces solution-based materials as intermediaries between the substrate and the final functional layers. These solution-phase precursors enable controlled deposition of multiple layers without requiring vacuum equipment, as the solutions can be applied using simple coating techniques. The solvent acts as a mediator that allows precise control of layer thickness and composition during drying and annealing, simplifying the overall manufacturing process while maintaining manufacturing precision.
3Manufacturing precision
If glass substrates are used to withstand high processing temperatures, then manufacturing precision is improved, but ease of manufacture deteriorates due to weight and flexibility constraints
Solution Approach 1:
The patent changes the substrate material parameter from glass to flexible resin, and correspondingly changes the processing temperature parameter from high-temperature (above glass transition) to low-temperature (below glass transition temperature). This dual parameter change enables the use of flexible, lightweight substrates that can be easily manufactured and processed, while maintaining manufacturing precision through optimized low-temperature deposition, drying, and annealing processes that occur below the substrate's glass transition temperature to prevent deformation.
Data Source
AI summary
A method for manufacturing a flexible semiconductor device comprises (i) forming an insulating film on the upper surface of a resin film, (ii) forming a pattern of extraction electrodes on the upper surface of the resin film, (iii) forming a semiconductor layer on the insulating film in such a manner that the semiconductor layer is in contact with the pattern of extraction electrodes, and (iv) forming a sealing resin layer on the upper surface of the resin film in such a manner that the sealing resin layer covers the semiconductor layer and the pattern of extraction electrodes, wherein at least one of the stepsof the above steps (i) to (iv) is carried out by a printing method. With this manufacturing method, various layers can be formed by a simple printing process without using a vacuum process, photolithography, or the like.


