Flexible Semiconductor Device Manufacturing via Resin Burying
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Solution Overview
Problem
The manufacturing of flexible semiconductor devices faces challenges such as complex processes for removing glass substrates and poor performance due to low thermal resistance of resin substrates, leading to high interconnection resistance and voltage drops in circuits.
Innovation Solution
A manufacturing method using a multilayer film with a first metal layer, an inorganic insulating layer, and a semiconductor layer, where the resin layer is pressure-bonded onto the substrate to bury electrodes, eliminating the need for high-temperature processes and simplifying the production of flexible semiconductor devices with improved performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a glass substrate is used for TFT device formation, then thermal resistance is excellent and manufacturing process is simplified, but weight increases and flexibility decreases
Solution Approach 1:
The invention changes the substrate material from glass to resin, fundamentally altering the thermal and mechanical parameters. This allows the device to achieve flexibility and weight reduction while maintaining manufacturability through low-temperature processing techniques specifically designed for resin substrates
Solution Approach 2:
The invention employs a resin substrate that inherently provides flexibility and thin-film characteristics. The substrate serves as both the structural base and the flexible element, eliminating the need for separate flexible components while achieving the desired portability and impact resistance
2Reliability
If a glass substrate is used for TFT device formation, then device performance is high, but manufacturing complexity increases due to removal processing
Solution Approach 1:
The invention extracts the need for glass substrate removal processing by directly forming TFT devices on resin substrates. This eliminates the complex multi-step removal process including adhesive reduction and physical/chemical release layer removal, simplifying the manufacturing flow while maintaining device performance
Solution Approach 2:
The invention performs preliminary action by directly forming the TFT device structure on the resin substrate from the beginning, rather than transferring from glass. This preliminary direct formation approach avoids subsequent removal and transfer steps, reducing manufacturing complexity
3Weight of moving object
If low process temperature is used for resin substrate, then flexibility is improved, but interconnection resistance increases and voltage drop occurs
Solution Approach 1:
The invention employs composite interconnection structures with multiple metal layers (e.g., Al/Cu/Al or Al/Ti/Al) to achieve both low resistance and flexibility. The composite structure combines materials with complementary properties to overcome the limitations of single-material interconnects in low-temperature processes
Solution Approach 2:
The invention changes the interconnection parameters by using multi-layer composite structures and optimizing layer thicknesses and materials specifically for low-temperature processing. This allows achieving low interconnection resistance without requiring high-temperature annealing that would compromise resin substrate flexibility
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the production of high-performance flexible semiconductor devices with reduced complexity and increased productivity, addressing the limitations of traditional methods by avoiding high-temperature processes and enhancing device reliability.
Implementation Method 1
a resin layer is pressure-bonded onto a surface of the multilayer film provided with the source/drain electrodes to burry the source/drain electrodes in the resin layer
Data Source
AI summary
A method includes the steps of preparing a multilayer film 80 formed by sequentially stacking a first metal layer 10, an inorganic insulating layer 20, a semiconductor layer 30, and a second metal layer 40; forming a source electrode 42s and a drain electrode 42d comprised of the second metal layer 40 by etching the second metal layer 40; pressure-bonding a resin layer 50 onto a surface of the multilayer film 80 provided with the source electrode 42s and the drain electrode 42d to burry the source electrode 42s and the drain electrode 42d in the resin layer 50; and forming a gate electrode 10g comprised of the first metal layer 10 by etching the first metal layer 10. The inorganic insulating layer 20g functions as a gate insulating film. The semiconductor layer 30 functions as a channel.