Flexible Semiconductor Device Transfer Method
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Solution Overview
Problem
The challenge lies in manufacturing flexible semiconductor devices based on inorganic semiconductors, as existing methods require growing single crystal nitride layers on non-flexible substrates, making the devices non-flexible and costly to produce, especially for large surface areas.
Innovation Solution
A method involving the transfer of semiconductor elements from non-flexible substrates to flexible substrates by forming vertical semiconductor elements, applying an inorganic insulating layer with OH groups, an amphipathic layer, and a polymerizable composition, which is cured to create a resin layer embedding the elements, allowing for separation and exposure, enabling the formation of flexible semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If single crystal nitride layers are epitaxially grown on non-flexible substrates, then high efficiency and high brightness are achieved, but the semiconductor device becomes non-flexible and costly to manufacture
Solution Approach 1:
The invention segments the manufacturing process into two distinct stages: first growing the nitride semiconductor layer on a non-flexible substrate to ensure high crystalline quality, then transferring the grown layer to a flexible substrate. This segmentation allows each stage to optimize for its specific requirement - crystalline quality during growth and flexibility in the final product.
Solution Approach 2:
The invention uses an intermediary transfer process involving a transfer substrate and controlled detachment. The nitride layer is grown on a non-flexible substrate, then transferred to a flexible substrate through intermediate steps including forming a detachment layer and using thermal or mechanical methods to separate and reattach the layer. This intermediary approach enables the transition from rigid to flexible form factor.
2Reliability
If single crystal nitride layers are epitaxially grown on non-flexible substrates, then high efficiency and high brightness are achieved, but the device is difficult to transform and disadvantageous for large surface manufacturing
Solution Approach 1:
The invention divides the substrate system into a growth substrate (non-flexible) and a final flexible substrate. The nitride layer is grown on the non-flexible substrate where high crystalline quality is achieved, then transferred to the flexible substrate that provides the desired adaptability and transformability for the final device application.
Solution Approach 2:
The invention employs thin film technology by growing a thin nitride semiconductor layer on the non-flexible substrate and then transferring it to a flexible substrate. The thin film nature of the transferred layer allows it to conform to flexible substrates, enabling the final device to be flexible, transformable, and suitable for large surface applications.
3Manufacturing precision
If non-flexible substrates are used for epitaxial growth, then single crystal nitride layers can be grown, but the resulting semiconductor device cannot be made flexible
Solution Approach 1:
The invention segments the substrate function into two parts: a non-flexible growth substrate that provides the necessary mechanical stability for high-quality epitaxial growth, and a flexible final substrate that provides the desired flexibility. The nitride layer is transferred from the growth substrate to the flexible substrate, separating the crystal growth requirement from the final shape requirement.
Solution Approach 2:
The invention creates a copy of the nitride semiconductor layer with high crystalline quality from the non-flexible substrate and transfers it to a flexible substrate. The transferred layer replicates the high-quality crystal structure while adopting the flexibility of the new substrate, effectively copying the desirable properties without the limitations of the original substrate.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method efficiently transfers semiconductor elements to flexible substrates, maintaining their arrangement and providing a strong bond, thus enabling the production of flexible semiconductor devices with improved cost-effectiveness and scalability.
Implementation Method 1
curing the applied polymerizable composition thereby converting the applied polymerizable composition into a resin layer
Implementation Method 2
forming an amphipathic layer on the surface of the inorganic insulating layer
Data Source
AI summary
Provided is a method of transferring semiconductor elements formed on a non-flexible substrate to a flexible substrate. Also, provided is a method of manufacturing a flexible semiconductor device based on the method of transferring semiconductor elements. A semiconductor element grown or formed on the substrate may be efficiently transferred to the resin layer while maintaining an arrangement of the semiconductor elements. Furthermore, the resin layer acts as a flexible substrate supporting the vertical semiconductor elements.