Flexible Thin Film Transistor Sensor for Biocompatible Pressure Detection
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Solution Overview
Problem
Conventional pressure sensors lack flexibility and biologic compatibility, making them unsuitable for human body-related medical in-vitro and wearable devices, and even more challenging for in-vivo implantation due to their inability to match the required elasticity and humanized integration.
Innovation Solution
A thin film transistor sensor utilizing a spatial ON/OFF function achieved through a spatial point contact change of flexible gate electrodes, allowing for effective integration and control by converting external pressure into electric signals, with a manufacturing method involving flexible substrates and semi-conductive materials like carbon nanotubes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional pressure sensors are used, then pressure sensing function is achieved, but flexibility and biologic compatibility are poor
Solution Approach 1:
The patent employs flexible thin film substrates as the base structure of the pressure sensor, enabling the device to conform to curved surfaces and flexible substrates. This thin film architecture provides both mechanical flexibility and biologic compatibility while maintaining pressure sensing functionality, directly resolving the contradiction between flexibility and sensing reliability
Solution Approach 2:
The patent utilizes composite material structures combining conductive materials with flexible substrate materials. The composite design integrates the electrical conductivity needed for sensing with the mechanical flexibility and biocompatibility of polymer or flexible substrate materials, achieving both sensing reliability and adaptability simultaneously
2Manufacturing precision
If rigid structures are used for pressure sensors, then manufacturing precision is improved, but flexibility and elasticity are reduced
Solution Approach 1:
The patent replaces rigid structural components with flexible thin film structures that can be fabricated using standard thin film deposition techniques. The thin film architecture maintains manufacturing precision through controlled deposition processes while inherently providing the flexibility and elasticity required for wearable and implantable applications
Solution Approach 2:
The patent changes the physical parameters of the sensor structure by transitioning from bulk rigid materials to thin film configurations. This parameter change in thickness and structure enables both precise fabrication through thin film processes and flexible mechanical properties, resolving the contradiction between manufacturing precision and elasticity
3Measurement precision
If conventional sensor structures are used, then pressure detection is achieved, but integration with human body is difficult
Solution Approach 1:
The flexible thin film structure enables the sensor to conform to the complex geometry of human body surfaces and implantable structures. This conformability allows precise pressure detection while facilitating seamless integration with human tissue, resolving the contradiction between measurement capability and biologic integration
Solution Approach 2:
The use of biocompatible composite materials in the sensor structure enables direct contact with human tissue without adverse reactions. The composite design maintains pressure detection precision while providing the biologic compatibility necessary for wearable and implantable medical applications
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables a flexible pressure sensor with excellent sensing capabilities, suitable for medical applications, including artificial electronic skin and wearable devices, by achieving biocompatibility and efficient signal transmission.
Implementation Method 1
The second substrate includes a second flexible base substrate and a second gate electrode disposed on the second flexible base substrate... configured to be electrically connected after the thin film transistor sensor is applied with pressure
Data Source
Figure 1~3a
Figure 3b~5a
Figure 5b~6b
AI summary
Provided are a thin film transistor sensor and a manufacturing method thereof. The thin film transistor sensor includes a first substrate (10) and a second substrate (20) opposite to each other, the first substrate (10) includes a first flexible base substrate (101) and a first gate electrode (102) disposed on the first flexible base substrate, and the second substrate (20) includes a second flexible base substrate (201) and a second gate electrode (202) disposed on the second flexible base substrate; the flexible base substrate (101) is further provided with an active layer (103), a source electrode (104) and a drain electrode (105), the second gate electrode (202) is at least partially overlapped with and separated from the first gate electrode (102), and configured to be electrically connected to the first gate electrode (102) after the thin film transistor sensor is applied with a voltage, such that the thin film transistor sensor is turned on. The thin film transistor sensor realizes an ON/OFF function of the thin film transistor by using a spatial point contact change of the first gate electrode and the second gate electrode of the flexible thin film transistor, so as to realize actions of the sensor.