Flexible Transistor Gas Barrier Layer for Oxide Semiconductor Stability
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Solution Overview
Problem
The challenge lies in creating a flexible transistor with a stable oxide semiconductor layer on a plastic substrate, where the mobility and ON/OFF ratio are compromised due to oxygen concentration sensitivity and water vapor scattering from the plastic substrate, making it difficult to control the semiconductor characteristics effectively.
Innovation Solution
A gas barrier layer is employed to shield oxygen and water vapor from the plastic substrate, preventing them from reaching the oxide semiconductor layer, thereby maintaining high mobility and ON/OFF ratio in the transistor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If In-Ga-Zn-O is deposited on a plastic substrate at room temperature, then flexibility and low-cost manufacturing are achieved, but oxygen concentration sensitivity causes unstable semiconductor characteristics
Solution Approach 1:
A gas barrier layer is introduced as an intermediary between the plastic substrate and the In-Ga-Zn-O semiconductor layer. This barrier layer prevents oxygen and water vapor from the substrate from reaching the semiconductor film, thereby stabilizing the semiconductor characteristics while maintaining room temperature deposition on flexible plastic substrates
2Ease of manufacture
If plastic substrate is used instead of inorganic substrate, then flexibility and low-cost manufacturing are achieved, but deoxidation from substrate causes difficult control of oxygen concentration
Solution Approach 1:
The gas barrier layer serves as a mediator that isolates the plastic substrate from the semiconductor layer. This prevents deoxidation from the plastic substrate from affecting the oxygen concentration in the semiconductor film, enabling precise control of semiconductor characteristics while using inexpensive flexible plastic substrates
3Shape
If plastic substrate is used, then flexibility is achieved, but water vapor scattering causes degradation of mobility and ON/OFF ratio
Solution Approach 1:
The gas barrier layer acts as a protective intermediary that prevents water vapor from the plastic substrate from scattering into the semiconductor layer. This maintains high carrier mobility and ON/OFF ratio while enabling the use of flexible plastic substrates
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a stable and flexible transistor with enhanced semiconductor characteristics, ensuring high mobility and ON/OFF ratio, even when formed at room temperature on a plastic substrate.
Implementation Method 1
oxygen and water vapor from a plastic substrate are shielded by a gas barrier layer, and they do not go to an oxide semiconductor layer
Implementation Method 2
when In—Ga—Zn—O is made by sputter method
Data Source
AI summary
A structure with a transistor is disclosed comprising a substrate, a gas barrier layer on the substrate, and a transistor on the gas barrier layer. The transistor can include an oxide semiconductor layer. The oxide semiconductor layers can comprise In—Ga—Zn—O. A display, such as a liquid crystal display, can have such a structure.