Semiconductor Flexure Contacts With Trench Isolation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
There is a need to reduce the size of miniature cameras used in electronic devices while maintaining their functionality and enhancing their shock resistance, as the size of electronic devices continues to decrease.
Innovation Solution
The development of a MEMS actuator device with a flexure formed from a semiconductor material, featuring a trench that separates the material into portions and an oxide layer for electrical isolation, allowing for the use of conductive materials to facilitate movement of optical elements like lenses within a miniature camera, enabling size reduction and improved shock resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If traditional actuator structures are used in miniature cameras, then the camera can maintain basic functionality, but the size cannot be reduced further and shock resistance remains insufficient
Solution Approach 1:
The actuator structure is segmented into separate functional components: a flexure member for mechanical movement, a trench structure for electrical isolation, and an oxide layer for insulation. This segmentation allows each component to be optimized independently, enabling size reduction while maintaining reliability through specialized functions in each segment.
Solution Approach 2:
The invention introduces a vertical dimension by etching trenches into the flexure member and forming oxide layers on specific surfaces. This three-dimensional structuring allows electrical isolation and mechanical functionality to coexist in the same footprint, enabling further size reduction without compromising shock resistance.
2Volume of moving object
If the camera size is reduced using MEMS techniques, then smaller cameras can be achieved, but electrical isolation between moving parts becomes more difficult
Solution Approach 1:
The invention merges multiple functions into the flexure member: it serves as both the mechanical element for movement and the substrate for electrical isolation structures. The trench and oxide layer are integrated directly into the flexure, eliminating the need for separate isolation components and reducing overall device complexity.
Solution Approach 2:
The oxide layer acts as an intermediary material that provides electrical isolation between conductive elements while occupying minimal space. This thin film mediator enables electrical separation without adding significant structural complexity or volume to the already compact MEMS device.
3Ease of operation
If conductive materials are added to enable lens movement, then actuator functionality is achieved, but electrical isolation requirements increase device complexity
Solution Approach 1:
The flexure member exhibits local quality variations: certain regions are made conductive to enable electrical connection and actuator functionality, while other regions incorporate trenches and oxide layers for electrical isolation. This spatial differentiation of electrical properties allows lens movement capability to be achieved without uniformly increasing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the creation of smaller, more reliable miniature cameras with enhanced shock resistance, suitable for various electronic devices, by allowing precise movement of optical elements and mitigating unwanted movements, thus improving the overall quality and reducing costs.
Implementation Method 1
An oxide layer may be formed in the first trench. The oxide layer may extend over a top portion of the first semiconductor material. The first trench and the oxide layer may cooperate to electrically isolate the first portion and the second portion from one another.
Data Source
AI summary
A device may comprise a flexure formed of a first semiconductor material. A first trench may be formed in the flexure. The first trench may separate the first semiconductor material into a first portion and a second portion thereof. An oxide layer may be formed in the first trench. The oxide layer may extend over a top portion of the first semiconductor material. A second semiconductor material may be formed on the oxide layer. The first trench and the oxide layer may cooperate to electrically isolate the first portion and the second portion from one another.