Flip-Chip LED Chip Lateral Terminal Segmentation
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Solution Overview
Problem
Current flipchip light-emitting diode semiconductor chips are complex and costly, making them non-competitive for many applications compared to simpler designs where the substrate faces the connection board, despite their high efficiency in radiation generation.
Innovation Solution
An optoelectronic semiconductor chip design featuring a semiconductor layer sequence with an active radiation-generating region between two semiconductor layers, terminal layers for electrical contacting, and insulation layers to reduce radiation loss and simplify manufacturing, allowing for efficient and cost-effective production.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If flipchip geometry is used for high efficiency radiation generation, then radiation efficiency is improved, but device complexity increases and manufacturing cost increases
Solution Approach 1:
The chip is divided into distinct functional regions: a first terminal layer region for electrical contact to the first semiconductor layer, a second terminal layer region for electrical contact to the second semiconductor layer, and an active region for radiation generation. This segmentation allows each region to be optimized independently while maintaining overall high efficiency.
Solution Approach 2:
The terminal layer regions are arranged in the lateral plane rather than vertically stacked, transitioning from a vertical integration approach to a lateral arrangement. This reduces structural complexity while maintaining the flipchip geometry's radiation generation efficiency.
2Use of energy by moving object
If flipchip geometry is used for high efficiency radiation generation, then radiation efficiency is improved, but manufacturing cost increases
Solution Approach 1:
The terminal layers serve multiple functions: they provide electrical contact to the respective semiconductor layers, act as current spreading layers to distribute current uniformly across the active region, and serve as part of the optical outcoupling structure. This multi-functionality reduces the number of separate components needed, simplifying manufacturing.
Solution Approach 2:
The electrical contact function and current spreading function are merged into a single terminal layer structure. The terminal layer regions are formed as continuous conductive layers that simultaneously provide both electrical contact and current distribution, reducing manufacturing steps and costs.
3Reliability
If terminal layers are arranged between insulation layers, then electrical insulation is improved, but radiation loss increases
Solution Approach 1:
The insulation layers are applied selectively only in regions where electrical insulation is required, rather than covering the entire chip surface. This localized insulation approach maintains electrical reliability while minimizing the amount of insulating material that could cause radiation loss.
Solution Approach 2:
The refractive index and thickness of the insulation layers are optimized to minimize their impact on radiation extraction. By carefully controlling these parameters, the insulation layers provide necessary electrical isolation while causing minimal interference with the optical performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design achieves high-efficiency radiation generation while reducing manufacturing complexity and costs, with improved heat dissipation and reduced absorption losses, enabling competitive performance with simpler chip designs.
Implementation Method 1
a semiconductor layer sequence (2) having an active region (20) that generates radiation
Implementation Method 2
insulation layers to reduce radiation loss
Data Source
AI summary
An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active region arranged between first and second semiconductor layers; a first contact and a second contact for external electrical contacting of the semiconductor chip; first and second terminal layer regions, via which the first and second contacts electrically conductively connect to the first and second semiconductor layers; and a first insulation layer and a second insulation layer; wherein the first terminal layer region and the second terminal layer region are each arranged in some areas between the first insulation layer and the second insulation layer in a vertical direction perpendicular to a main extension plane of the active region; the first terminal layer region and the second terminal layer region are arranged side by side without overlapping; and the first terminal layer region extends in places up to a side surface of the semiconductor chip.