Flip-Chip LED MIS Structure Leakage Current Reduction
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Solution Overview
Problem
The existing metal-insulator-semiconductor (MIS) structure in vertical type LEDs faces limitations in electrode layer formation efficiency and manufacturing process efficiency, especially for medium to large-sized displays, and there is a need for a flip-chip LED that can reduce leakage currents and improve manufacturing efficiency.
Innovation Solution
A flip-chip LED with a MIS structure is developed, featuring a light-emitting layer, n-type and p-type semiconductor layers, distinct electrodes, and insulating layers to reduce leakage currents and enhance manufacturing efficiency, along with a manufacturing method that includes depositing semiconductor layers, forming contact holes, and depositing metal and insulating layers to create a flip-chip structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a vertical type LED structure is used with MIS structure, then leakage currents are reduced, but electrode layer formation efficiency and manufacturing process efficiency deteriorate
Solution Approach 1:
The patent inverts the conventional vertical LED structure to a flip-chip horizontal structure. The active layer is flipped so that the light-emitting surface faces downward toward the substrate, while the electrodes are formed on the upper surface. This inversion allows the MIS structure to be effectively applied to reduce leakage currents while enabling more efficient electrode formation and manufacturing processes through planar geometry.
Solution Approach 2:
The patent transitions from a vertical dimension-oriented structure to a horizontal dimension-oriented flip-chip structure. By changing the orientation from vertical to horizontal, the electrode layers can be formed in a planar configuration that improves manufacturing efficiency, particularly for medium to large-sized displays, while maintaining the MIS structure's ability to reduce leakage currents.
2Reliability
If a vertical type LED structure is used, then MIS structure can be applied to reduce leakage currents, but electrode layer formation efficiency and transfer process efficiency deteriorate
Solution Approach 1:
The patent inverts the conventional vertical LED structure to a flip-chip horizontal structure. The active layer is flipped so that the light-emitting surface faces downward toward the substrate, while the electrodes are formed on the upper surface. This inversion allows the MIS structure to be effectively applied to reduce leakage currents while enabling more efficient electrode formation and manufacturing processes through planar geometry.
3Reliability
If a vertical type LED structure is used, then MIS structure can be applied, but manufacturing efficiency for medium to large sized displays deteriorates
Solution Approach 1:
The patent transitions from a vertical dimension-oriented structure to a horizontal dimension-oriented flip-chip structure. By changing the orientation from vertical to horizontal, the electrode layers can be formed in a planar configuration that improves manufacturing efficiency, particularly for medium to large-sized displays, while maintaining the MIS structure's ability to reduce leakage currents.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces leakage currents and improves the utilization and manufacturing efficiency of flip-chip LEDs, enabling their application in micro LEDs with high resolution, low power consumption, and long lifespan.
Implementation Method 1
a plurality of insulating layers that are provided on the upper and lower parts of the metal layers such that the metal layers can be electrically distinguished from the first electrode and the second electrode
Implementation Method 2
a light-emitting layer
Data Source
AI summary
A flip-chip light emitting diode (LED), a display device including at least one flip-chip LED, and a method of manufacturing the LED. The flip-chip LED including a light-emitting layer; an n-type semiconductor layer laminated on a lower part of the light-emitting layer; a p-type semiconductor layer laminated on an upper part of the light-emitting layer; a first electrode that is electrically connected to the n-type semiconductor layer via a first contact hole formed in the LED; a second electrode that is electrically connected to the p-type semiconductor layer, and is electrically insulated from the first electrode; a metal layer provided in a first area, a second area, and a third area; a third electrode that is formed on the metal layer in the third area, is electrically connected to the metal layer, and is electrically insulated from the first electrode and the second electrode; and a plurality of insulating layers.