Flip Chip LED Protruding Electrode Coupling
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Solution Overview
Problem
Flip chip light emitting diodes face challenges in achieving effective coupling of P and N electrodes with the base, leading to poor electrical conductivity and quality, especially in vertical type structures, and difficulties in positioning electrodes for flip chip structures.
Innovation Solution
The design incorporates a semiconductor layer with an epitaxial layer, N-semiconductor layer, light active layer, and P-semiconductor layer, along with insulating and conductive layers, and a supporting portion to enhance mechanical strength and assembly yield, and a method of manufacturing involving etching and layer formation to optimize electrode placement and conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the light emitting diode uses a vertical type structure with P and N electrodes mounted on different sides, then the structure is simple to manufacture, but the electrical conductivity between the light emitting diode and the base is poor
Solution Approach 1:
The patent inverts the conventional vertical structure by making the semiconductor layer protrude upward from the base, with both P and N electrodes mounted on the same side (the protruding end). This inversion resolves the contradiction by achieving good electrical conductivity through direct electrode-to-base contact while maintaining manufacturing simplicity through a streamlined single-side electrode configuration.
2Reliability
If the flip chip light emitting diode couples with the base by P and N electrodes, then the electrical conductivity is improved, but the positioning of electrodes with the base is difficult leading to poor coupling
Solution Approach 1:
The patent applies preliminary action by pre-forming the semiconductor layer to protrude upward from the base before electrode mounting. This pre-positioning of the semiconductor structure establishes predetermined electrode locations that align with base electrodes, eliminating positioning difficulties and ensuring precise coupling while maintaining good electrical conductivity.
Solution Approach 2:
The protruding semiconductor layer acts as an intermediary structure that facilitates precise positioning between the base electrodes and the P/N electrodes. This intermediate protruding structure provides a stable platform that ensures accurate alignment and coupling, resolving the positioning precision issue while maintaining electrical conductivity.
3Reliability
If the semiconductor layer is made to protrude from the base, then the coupling and conductivity of electrodes is improved, but the device complexity increases
Solution Approach 1:
The patent merges the semiconductor layer formation with the base structure by making the semiconductor layer an integral part of the base (the base includes the semiconductor layer). This merging eliminates the need for separate positioning structures or complex assembly steps, achieving improved electrode coupling and conductivity while minimizing device complexity through structural integration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves the coupling and conductivity of electrodes, enhancing the mechanical strength and assembly yield of flip chip light emitting diodes, resulting in improved light emitting diode quality and efficiency.
Implementation Method 1
diffusing a first dopant of N-type into the semiconductor layer to form an N-semiconductor layer
Implementation Method 2
diffusing a second dopant of P-type into the semiconductor layer to form a P-semiconductor layer
Implementation Method 3
Light emitting diode (LED) is a semiconductor device for converting current to light with different waves
Data Source
AI summary
A flip chip light emitting diode includes a semiconductor layer comprising an epitaxial layer an N-semiconductor layer, a light active layer and a P-semiconductor layer arranged from top to bottom in series. A first electrode mounted on the semiconductor layer. A second electrode mounted on the semiconductor layer. A insulating layer mounted on the semiconductor layer. The N-semiconductor layer protrudes away from the epitaxial layer to form a protruding portion. The light active layer and the P-semiconductor layer mounts on the protruding portion in series. The insulating layer mounts between the first electrode and the protruding portion, the light active layer, the P-semiconductor layer and the second electrode. The flip chip light emitting diode also comprises a supporting portion, the supporting portion is mounted on a top surface of the epitaxial layer by a connecting portion. The connecting portion has same or different materials with the supporting portion.