Flip-Chip LED Structure Eliminating Silicon Light Absorption
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Solution Overview
Problem
The luminance efficiency of conventional light-emitting diode elements is compromised due to the light absorption properties of silicon substrates.
Innovation Solution
A flip-chip light-emitting diode structure is developed without a silicon substrate, featuring a carrier substrate, a light-emitting die structure with a reflective layer, dielectric and contact layers, and a manufacturing method that forms these components to enhance luminance efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a silicon substrate is used as a carrier for the semiconductor composite layer, then the structural support and manufacturing ease are improved, but the luminance efficiency deteriorates due to light absorption
Solution Approach 1:
The patent removes the silicon substrate from the LED structure and replaces it with a carrier substrate. This extraction eliminates the harmful light absorption property of silicon while maintaining the necessary structural support function through the alternative carrier substrate, thereby resolving the contradiction between ease of manufacture and luminance efficiency
Solution Approach 2:
The patent introduces a carrier substrate as an intermediary component between the semiconductor composite layer and the underlying structure. This carrier substrate serves as a mediator that provides mechanical support and facilitates manufacturing while having minimal impact on light transmission, thus resolving the conflict between structural support needs and luminance efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively increases luminance efficiency by eliminating light absorption issues, improving the performance of light-emitting diode structures.
Implementation Method 1
The reflective layer is located on the first type semiconductor layer
Data Source
AI summary
A flip-chip light-emitting diode structure comprises a carrier substrate, a light-emitting die structure, a reflective layer, an aperture, a dielectric layer, a first contact layer and a second contact layer. The light-emitting die structure, located on the carrier substrate, comprises a first type semiconductor layer, a second type semiconductor layer and a light emitting layer. The light emitting layer is formed between the first type and the second type semiconductor layer. The reflective layer is located on the first type semiconductor layer. The aperture penetrates the light-emitting die structure. The dielectric layer covers an inner sidewall of the aperture and extends to a portion of a surface of the reflective layer. The first contact layer is disposed on the part of the reflective layer not covered by the dielectric layer. The second contact layer fills up the aperture and is electrically connected to the second type semiconductor layer.