3D Memory Module With Flip Chip Coupling
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Solution Overview
Problem
High-capacity memory modules experience performance degradation due to increased data communication latency, particularly in non-volatile data storage devices like embedded MultiMedia Cards and USB flash memory devices, as the number of data communications between the memory and controller increases.
Innovation Solution
Implementing flip chip and bump technology to couple controller and memory dies, enabling parallel transmission of codewords through a bus with a sufficient number of electrical contacts, allowing for full codeword communication in a single clock cycle, and arranging multiple chip stacks on a common substrate for enhanced storage capacity and throughput.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If storage capacity of memory modules is increased, then data storage capability is improved, but data communication latency increases and performance decreases
Solution Approach 1:
The patent transitions from two-dimensional planar interconnections to three-dimensional vertical interconnections using through-silicon vias (TSVs). Multiple memory dies are stacked vertically with TSVs providing direct vertical pathways for data communication, eliminating the need for lateral signal routing and reducing communication latency while increasing storage capacity.
Solution Approach 2:
The memory system is divided into multiple independent memory dies, each capable of parallel data communication with the controller. By segmenting the memory into separate dies stacked vertically, the system achieves both increased storage capacity and reduced latency through parallel data transfer operations.
2Productivity
If number of electrical contacts is increased to enable parallel transmission, then data throughput is improved, but device complexity increases
Solution Approach 1:
The patent utilizes the vertical dimension through TSVs to create direct electrical pathways between stacked memory dies and the controller. This vertical interconnection approach enables high-density parallel data transmission without requiring an equivalent increase in lateral contact area, thus improving throughput while managing device complexity.
3Quantity of substance
If multiple chip stacks are arranged on common substrate, then storage capacity and data throughput are increased, but manufacturing complexity increases
Solution Approach 1:
The memory system is divided into multiple independent memory dies, each capable of parallel data communication with the controller. By segmenting the memory into separate dies stacked vertically, the system achieves both increased storage capacity and reduced latency through parallel data transfer operations.
Solution Approach 2:
The common substrate serves multiple functions: it provides mechanical support for multiple chip stacks, electrical interconnection through TSVs, and thermal management. This multi-functional design enables increased storage capacity while managing manufacturing complexity through a standardized platform.
Data Source
AI summary
A data storage device includes a memory die including a plurality of storage elements arranged in a three dimensional (3D) memory configuration and a controller die coupled to the memory die via a bus including a plurality of electrical contacts between adjacent surfaces of the memory die and the controller die. A method performed at the data storage device includes receiving, at the controller die, data to be stored at the memory die and generating a codeword representing the data. The codeword includes a particular number of bits. The method also includes sending signals from the controller die to the memory die via the plurality of electrical contacts. The plurality of electrical contacts includes at least as many electrical contacts as the particular number of bits of the codeword, and the signals representing the codeword are sent from the controller die to the memory die in parallel.