Flip-Chip RF Amplifier Package With Nested Heatsink Layout

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Solution Overview

Problem

High-power RF transistor amplifiers, particularly those using Group III nitride materials, face challenges with heat dissipation and packaging efficiency, leading to performance degradation and increased costs due to the need for complex assembly processes and larger heatsinks to accommodate taller surface mount components.

Innovation Solution

The design includes a transistor package with a flip-chip mounted transistor die on a circuit board, a heatsink with cut-out regions to accommodate taller surface mount components, and a thermally conductive bonding material for efficient heat dissipation, allowing for a larger heatsink while maintaining a compact footprint.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If a larger heatsink is used to accommodate taller surface mount components, then the heat dissipation capability is improved, but the overall package size increases

Engineering Contradiction:
Improveheat dissipation capabilityVSAvoidpackage footprint
Core Design Contradiction:
TemperatureVSArea of stationary object

Solution Approach 1:

The patent places surface mount components vertically within the heatsink footprint by extending them through cut-out regions in the heatsink structure. This nesting approach allows components to occupy the same horizontal footprint as the heatsink while extending vertically, thereby improving heat dissipation capability without increasing the overall package footprint.

Inventive Principle:
Principle #7Nested doll (Nesting)

2Reliability

If complex assembly processes are used to accommodate both heatsink and surface mount components, then the heat dissipation and component integration are improved, but the manufacturing complexity and cost increase

Engineering Contradiction:
Improvecomponent integrationVSAvoidassembly process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines the heatsink structure with integrated cut-out regions that directly accommodate surface mount components. By merging the heatsink design with component mounting features, the patent eliminates the need for separate assembly steps and complex integration processes, thereby improving component integration while reducing manufacturing complexity.

Inventive Principle:
Principle #5Merging (Combining)

3Reliability

If taller surface mount components are used to achieve desired electrical performance, then the RF amplifier performance is improved, but the packaging space and assembly complexity increase

Engineering Contradiction:
ImproveRF amplifier performanceVSAvoidcomponent height
Core Design Contradiction:
ReliabilityVSVolume of stationary object

Solution Approach 1:

The patent resolves the height constraint by utilizing the vertical dimension through the heatsink structure. Taller surface mount components are positioned vertically within the heatsink footprint, extending through cut-out regions. This dimensional approach allows taller components to be accommodated without increasing the horizontal package footprint, thereby maintaining RF amplifier performance while controlling packaging space.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design enhances heat dissipation and reduces assembly complexity, improving the performance and cost-effectiveness of RF transistor amplifier circuits by enabling the use of larger surface mount components within the heatsink footprint without increasing the overall size of the package.

Implementation Method 1

a thermally conductive bonding material for efficient heat dissipation

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20240105692A1Packaged flip chip radio frequency transistor amplifier circuits
Publication Date: 2024.03.28 MACOM TECH SOLUTIONS HLDG INC
  • US20240105692A1 patent drawing
  • US20240105692A1 patent drawing
  • US20240105692A1 patent drawing

AI summary

RF transistor amplifier circuits are provided that comprise a circuit board and an RF transistor amplifier die. The RF transistor amplifier die is flip-chip mounted on an upper surface of the circuit board so that a gate terminal, a drain terminal and a source terminal of the die face the upper surface of the circuit board. These RF transistor amplifier circuits further include a heatsink mounted on an upper surface of the RF transistor amplifier die and a plurality of surface mount circuit elements mounted on the upper surface of the circuit board so that a footprint of the heatsink vertically overlaps each of the plurality of surface mount circuit elements.