Flip-Chip SAW Band Reject Filter Layout for Low-Loss Miniaturization

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Solution Overview

Problem

Conventional surface acoustic wave (SAW) band reject filters are large and costly due to the need for high Q values, which are not efficiently achieved with conventional components, making them unsuitable for modern wireless communication equipment requiring compact and low-loss designs.

Innovation Solution

The implementation of SAW band reject filters using flip chip assembly technology with electrode bars formed on the substrate, reducing the size of the die and minimizing loss and parasitic inductance by placing SAW resonators closer together and using shorter electrode bars.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional components such as air cavity filters are used to implement high Q band reject filters, then the filter achieves steep transition bands, but the filter becomes undesirably large in size and expensive

Engineering Contradiction:
Improvetransition band steepnessVSAvoidfilter size
Core Design Contradiction:
Manufacturing precisionVSArea of stationary object

Solution Approach 1:

The patent replaces conventional mechanical air cavity filters with surface acoustic wave (SAW) resonators that utilize acoustic wave propagation on a piezoelectric substrate. This substitution enables high Q values and steep transition bands while achieving compact filter dimensions suitable for modern wireless equipment

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the fundamental operating parameters by using SAW resonators with specific electromechanical coupling coefficients and acoustic wave propagation characteristics. By controlling the reflector finger spacing to be less than one-half of the acoustic wavelength and using specific interdigital transducer configurations, the filter achieves high Q values in a compact form factor

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If SAW resonators with high Q are used for band reject filter design, then steep transition bands are achieved, but the resonator dimensions become much bigger requiring huge die and long connecting bus bars that introduce excessive loss and parasitic inductance

Engineering Contradiction:
Improvetransition band steepnessVSAvoidinsertion loss
Core Design Contradiction:
Manufacturing precisionVSLoss of energy

Solution Approach 1:

The patent repositions the SAW resonators vertically on the die surface rather than spreading them out horizontally. By stacking resonators in multiple layers or utilizing the vertical dimension of the die, the design achieves compact horizontal footprint while maintaining short inter-resonator connection lengths, thereby reducing parasitic inductance and insertion loss

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent merges the functions of multiple SAW resonators into a compact integrated structure where resonators are closely spaced and interconnected with minimal parasitic elements. The connecting bus bars are integrated directly into the resonator structure rather than being separate external connections, reducing overall loss

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the creation of compact, low-loss SAW band reject filters that are more suitable for modern wireless communication equipment, reducing the overall size and cost while maintaining high Q values.

Implementation Method 1

Surface acoustic wave, SAW, devices have been used to implement miniature band pass filters

Methodology Applied
Scientific EffectSurface acoustic wave: Surface Acoustic Wave

Implementation Method 2

SAW resonators can be used to implement band pass filters and band reject filters

Methodology Applied
Scientific EffectResonance: Resonance

Implementation Method 3

inter-digital transducer, IDT, interlaced fingers electrically connected by two IDT bus bars

Methodology Applied
Scientific EffectPiezoelectric effect: Piezoelectric Effect

Data Source

PatentEP3285396B1Flip chip type saw band reject filter design
Publication Date: 2020.06.03 TELEFONAKTIEBOLAGET LM ERICSSON (PUBL)
  • EP3285396B1 patent drawingFigure 1~2
  • EP3285396B1 patent drawingFigure 3~5
  • EP3285396B1 patent drawingFigure 6~8

AI summary

A surface acoustic wave band reject filter (34) implemented as a flip chip assembly is presented. The surface acoustic wave band reject filter (34) comprises a substrate (24) including electrode bars (20) and bonding pads (36) formed on the substrate (24), and at least one die (26) having a side facing the substrate (24), a plurality of surface acoustic wave resonators (10) being formed on the at least one die (26), the at least one die (26) being mounted on the substrate (24), solder balls (22) in contact with the side of the at least one die (26) facing the substrate (24), the solder balls (22) being positioned to be in electrical contact with the electrode bars (20) and bonding pads (36) on the substrate (24), the plurality of surface acoustic wave resonators (10) being connected by the electrode bars (20) and bonding pads (36) via the solder balls (22) and collectively exhibiting a band reject filter response. According to a first arrangement, a first three of the plurality of the surface acoustic wave resonators (10) are arranged so that two of the plurality of surface acoustic wave resonators (10) are electrically in series, and a third surface acoustic wave resonator (10) is electrically in parallel to and between the two of the plurality of surface acoustic wave resonators (10). According to a second arrangement, a first three of the plurality of surface acoustic wave resonators (10) are arranged such that a first two surface acoustic wave resonators (10) are electrically in parallel, and a third surface acoustic wave resonator (10) is electrically intervening between the first two surface acoustic wave resonators (10).