Floating Body MOSFET Antifuse for Secure Data Storage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional fuse elements with copper interconnects in integrated circuits face security risks due to void spaces created after melting and occupy large areas, while existing antifuse elements lack efficient methods for programming and data storage.
Innovation Solution
The use of floating body MOSFETs as antifuse elements, where a junction between the drain area and semiconductor well is broken to create a high resistance state without void creation, allowing for secure and compact data storage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If copper wire fuse elements are used, then overcurrent protection function is achieved, but void spaces are created after melting causing security risks
Solution Approach 1:
The patent changes the material parameter from copper wire to silicon-based semiconductor material, and changes the failure mode parameter from melting to junction breakdown. This transforms the fuse element from a metal conductor to a semiconductor device, eliminating the void space creation issue while maintaining the overcurrent protection function through controlled junction failure.
Solution Approach 2:
The patent uses a composite structure combining semiconductor materials (silicon well, source/drain regions) to create a fuse element that integrates both the protective function and the security requirement. The semiconductor composite structure allows for controlled breakdown without creating detectable void spaces.
2Reliability
If copper wire fuse elements are used, then overcurrent protection is provided, but large area is occupied by the fuse memory array
Solution Approach 1:
The patent changes the structural parameters by using vertically integrated semiconductor structures (silicon well, source/drain regions) that can be densely packed. This allows the fuse elements to occupy significantly less area compared to traditional copper wire fuse elements, enabling higher density memory arrays.
3Device complexity
If conventional fuse elements are used, then simple structure is maintained, but security vulnerabilities and large area occupation occur
Solution Approach 1:
The semiconductor-based fuse element uses the inherent properties of semiconductor materials and junction breakdown mechanisms to achieve both security and functionality. The breakdown process itself creates the protective function without requiring additional security features, making the device self-sufficient and secure by design.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution provides secure data storage without void spaces and reduces the area occupied by memory arrays, enhancing the security and efficiency of integrated circuits.
Implementation Method 1
break the junction between the drain area and the semiconductor well to generate a current between the source area, the semiconductor well, and the drain area
Data Source
AI summary
Embodiments herein may describe techniques for an integrated circuit including a MOSFET having a semiconductor well, a source area and a drain area next to the semiconductor well, a gate electrode, and a base terminal. The gate electrode may be coupled to the base terminal, hence forming a floating body MOSFET. A junction may exist between the drain area and the semiconductor well. A first resistance may exist between the source area and the drain area through the semiconductor well. A programming operation may be performed when the gate electrode is coupled to a high impedance, a programming voltage is applied at the source area, and the drain area is coupled to a ground voltage to break the junction between the drain area and the semiconductor well to generate a current between the source area, the semiconductor well, and the drain area. Other embodiments may be described and/or claimed.