Floating-bridge Interconnects for High-density Semiconductor Packaging

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Solution Overview

Problem

The miniaturization of semiconductive devices during packaging requires 2D multiple-die footprints, which poses challenges in achieving higher chipset densities and efficient interconnectivity while managing inductive and resistivity issues.

Innovation Solution

The implementation of floating-bridge interconnects, specifically silicon-bridge and organic-bridge interconnects, which hover above a middle semiconductive device, allowing for high-speed interconnectivity between logic processors and graphics processors without requiring additional lateral connections, thus optimizing package-substrate real estate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If 2D multiple-die footprints are used for miniaturization, then device density is improved, but inductive and resistivity issues worsen

Engineering Contradiction:
Improvedevice densityVSAvoidinductive and resistivity issues
Core Design Contradiction:
Quantity of substanceVSObject-affected harmful factors

Solution Approach 1:

The patent transitions from traditional 2D planar interconnects to 3D vertically-stacked interconnect bridges. Multiple interconnect bridges are stacked vertically above the middle semiconductive device, creating a three-dimensional architecture that enables faster signal transmission and reduces inductive and resistivity effects while maintaining high device density.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Adaptability or versatility

If lateral connections are added for interconnectivity, then connectivity is improved, but package-substrate real estate is consumed

Engineering Contradiction:
ImproveinterconnectivityVSAvoidpackage-substrate real estate
Core Design Contradiction:
Adaptability or versatilityVSArea of stationary object

Solution Approach 1:

The patent employs vertical stacking of interconnect bridges in the Z-dimension rather than expanding lateral connections in the X-Y plane. This 3D architecture provides multiple interconnect pathways between logic processors and graphics processors without consuming additional package-substrate real estate, effectively resolving the space-connectivity tradeoff.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Speed

If interconnect bridges are stacked vertically, then interconnect speed is improved, but manufacturing complexity increases

Engineering Contradiction:
Improveinterconnect speedVSAvoidmanufacturing complexity
Core Design Contradiction:
SpeedVSDevice complexity

Solution Approach 1:

The patent forms multiple interconnect bridges in a stacked configuration before final assembly, with bridge contact pads and device contact pads pre-positioned and aligned. This preliminary structuring simplifies subsequent assembly steps and reduces manufacturing complexity despite the 3D architecture.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent introduces a middle semiconductive device as an intermediary platform that supports the vertically-stacked interconnect bridges. This middle device serves as a foundation for the 3D interconnect structure, enabling complex vertical stacking while maintaining manufacturing feasibility through modular assembly.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS11393760B2Floating-bridge interconnects and methods of assembling same
Publication Date: 2022.07.19 INTEL CORP
  • US11393760B2 patent drawing
  • US11393760B2 patent drawing
  • US11393760B2 patent drawing

AI summary

A semiconductor apparatus includes a floating-bridge interconnect that couples two semiconductive devices that are arranged across a middle semiconductive device. The floating-bridge interconnect can be semiconductive material such as a silicon bridge, or it can be an organic bridge. Computing functions required in one of the two semiconductive devices can be off-loaded to any of the floating-bridge interconnect or the other of the two semiconductive devices.