Stacked Solid-State Imager Shielding for Floating Diffusion PLS

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Solution Overview

Problem

Conventional solid-state imaging devices face issues with parasitic light sensitivity (PLS) due to stray light entering the floating diffusion, leading to erroneous signal charge detection.

Innovation Solution

A solid-state imaging device design that includes a first semiconductor substrate with photoelectric conversion units and a second semiconductor substrate with a charge holding unit, where the second wiring layer is positioned between the first and second semiconductor layers, and a light shielding layer is provided to block stray light from reaching the charge holding unit.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If the floating diffusion is separated from the optical center of the pixel to inhibit stray light, then parasitic light sensitivity is reduced, but the structural complexity and device design difficulty increase

Engineering Contradiction:
Improveparasitic light sensitivityVSAvoidstructural complexity
Core Design Contradiction:
Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

A light shielding layer is introduced as an intermediary component between the photoelectric conversion unit and the floating diffusion. This layer selectively blocks stray light paths while allowing the device structure to remain conventional, thus reducing parasitic light sensitivity without increasing structural complexity

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The solution moves from modifying the horizontal position of the floating diffusion to adding a vertical layer (light shielding layer) in the thickness direction of the device. This dimensional change allows stray light blocking without altering the planar layout or increasing lateral structural complexity

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Object-affected harmful factors

If a light shielding layer is added to block stray light from the charge holding unit, then parasitic light sensitivity is suppressed, but the device complexity and manufacturing difficulty increase

Engineering Contradiction:
Improveparasitic light sensitivityVSAvoidmanufacturing ease
Core Design Contradiction:
Object-affected harmful factorsVSEase of manufacture

Solution Approach 1:

The light shielding layer is designed to serve multiple functions: it blocks stray light from reaching the charge holding unit, and can be integrated with existing device layers. This multi-functionality reduces the need for additional dedicated components, simplifying manufacturing

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The light shielding layer is merged with existing device structures such as wiring layers or insulating layers, rather than being implemented as a separate standalone component. This integration approach reduces manufacturing steps and maintains ease of production

Inventive Principle:
Principle #5Merging (Combining)

3Object-affected harmful factors

If the second wiring layer is positioned between the first and second semiconductor layers, then light shielding effectiveness is improved, but the device structure becomes more complex

Engineering Contradiction:
Improvestray light blocking effectivenessVSAvoidlayer structure complexity
Core Design Contradiction:
Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The second wiring layer is designed to simultaneously serve as both an electrical connection element and a light shielding element. By making the wiring layer perform dual functions, no additional light shielding structure is needed, thus maintaining structural simplicity while achieving effective stray light blocking

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively suppresses parasitic light sensitivity by blocking stray light, enhancing the accuracy of signal charge detection and reducing photoelectric conversion in the charge holding unit.

Implementation Method 1

a light shielding layer provided in at least one of the first wiring layer or the second wiring layer at a position facing the charge holding unit in a thickness direction

Methodology Applied
Scientific EffectLight shielding: Absorption (EM radiation)

Implementation Method 2

a first semiconductor layer including a first region including a first semiconductor material and a second region including a second semiconductor material... and including a photoelectric conversion unit that performs photoelectric conversion

Methodology Applied
Scientific EffectPhotoelectric conversion: Photoelectric Effect

Data Source

PatentUS20240063237A1Solid-state imaging device and electronic equipment
Publication Date: 2024.02.22 SONY SEMICON SOLUTIONS CORP
  • US20240063237A1 patent drawing
  • US20240063237A1 patent drawing
  • US20240063237A1 patent drawing

AI summary

PLS is further suppressed. A solid-state imaging device includes: a first semiconductor substrate including a first semiconductor layer provided with a plurality of photoelectric conversion units that performs photoelectric conversion, and a first wiring layer provided on a surface side opposite to a light incident surface of the first semiconductor layer; a second semiconductor substrate including a second semiconductor layer provided with a charge holding unit that holds signal charge generated in the photoelectric conversion unit and a second wiring layer provided on one surface side of the second semiconductor layer, and overlapped with and bonded to the first semiconductor substrate such that the second wiring layer is positioned between the first wiring layer and the second semiconductor layer; and a light shielding layer provided in at least one of the first wiring layer or the second wiring layer at a position facing the charge holding unit in a thickness direction.