Floating Dummy Transistor Layout for IC Leakage Control
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Solution Overview
Problem
The leakage current between active transistors and dummy transistors in integrated circuits degrades the accuracy and functionality of the IC, and conventional methods to reduce this current increase capacitance at the active transistor, degrading operational speed.
Innovation Solution
The dummy transistors are coupled in a series configuration with their conductive regions maintained in a floating state to control the leakage current between active transistors, thereby reducing capacitance and enhancing operational speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If dummy transistors are abutted to active transistors with gate regions at the same voltage level as source regions and/or drain regions, then transistor matching is improved, but leakage current increases between active transistors and dummy transistors
Solution Approach 1:
The dummy transistor is divided into multiple segments (first dummy transistor with first and second conductive regions, second dummy transistor, etc.). The conductive regions are maintained in a floating state to control leakage current while preserving transistor matching benefits.
Solution Approach 2:
The voltage state of conductive regions in dummy transistors is changed from being at the same voltage level as source/drain regions to being in a floating state. This parameter change reduces leakage current while maintaining the structural configuration that provides transistor matching.
2Object-generated harmful factors
If conventional methods are used to reduce leakage current, then leakage current is reduced, but capacitance at the active transistor increases, degrading operational speed
Solution Approach 1:
The dummy transistor structure is segmented into multiple parts with conductive regions maintained in a floating state. This segmentation allows leakage current control without adding significant capacitance to the active transistor, preserving operational speed.
Solution Approach 2:
The conductive regions of the dummy transistor act as intermediaries that are maintained in a floating state. This intermediary configuration provides a path to control leakage current while minimizing capacitance coupling to the active transistor, thus maintaining high operational speed.
Data Source
AI summary
An integrated circuit (IC) includes one or more active transistors and multiple series-coupled dummy transistors. The dummy transistors are coupled between two active transistors and/or at the ends of each active transistor. When the dummy transistors are coupled between two active transistors, apart from two conductive regions that are coupled to two active transistors, each remaining conductive region of the dummy transistors is maintained in a floating state to control a leakage current between the two active transistors. Similarly, when the dummy transistors are coupled at an end of one active transistor, apart from one conductive region that is coupled to the active transistor, each remaining conductive region of the dummy transistors is maintained in the floating state to control a leakage current between the active transistor and the dummy transistors.