Floating Electrode FET Reducing Off-State Current
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Solution Overview
Problem
In field-effect transistors (FETs) with conductor-semiconductor junctions, the off-state current is challenging to reduce due to high carrier concentrations near the junction interface, especially when the channel length is short or the gate insulating film is thick, leading to increased zero current and leakage currents, which hinder their application in power devices and memory storage.
Innovation Solution
The introduction of a floating electrode enclosed by an insulator, positioned between the semiconductor layer and the gate, which is charged during manufacturing to create a region with low electron concentration, reducing the off-state current by balancing the electron injection and elimination forces, thereby forming a novel FET structure with improved zero current characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the channel length is shortened or the gate insulating film is thickened, then the device integration is improved or the gate control is enhanced, but the off-state current increases due to high carrier concentration near the junction interface
Solution Approach 1:
A floating electrode is introduced as an intermediary component between the gate and the semiconductor layer. This floating electrode is charged during manufacturing to generate an electric field that repels carriers from the junction interface region, thereby reducing the off-state current without requiring changes to the channel length or gate insulating film thickness
Solution Approach 2:
The invention changes the electrical parameter (charge state) of the floating electrode to control the carrier distribution. By adjusting the charge amount on the floating electrode, the electric field strength is modified to optimize the reduction of off-state current while maintaining device performance
2Object-generated harmful factors
If the carrier concentration is reduced to lower off-state current, then the leakage current is reduced, but the on-state current and device performance deteriorate
Solution Approach 1:
The floating electrode creates a localized electric field that specifically affects the carrier distribution near the junction interface where leakage occurs. The bulk semiconductor material maintains its original carrier concentration, ensuring that on-state current and device performance are not compromised while leakage current is reduced in the critical region
3Reliability
If a charged floating electrode is introduced to reduce off-state current, then the zero current characteristics are improved, but the device structure and manufacturing complexity increase
Solution Approach 1:
The floating electrode is charged during the manufacturing process before the device is assembled and operated. This preliminary charging action eliminates the need for external charging circuits or complex control mechanisms, simplifying the final device structure while achieving improved zero current characteristics
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces the off-state current to extremely low levels, enhancing the FET's performance for power devices and memory applications by stabilizing the electric charge retention and minimizing leakage currents, even in small device sizes.
Implementation Method 1
a floating electrode between the semiconductor layer and the gate. The floating electrode includes a conductor or a semiconductor, is enclosed by an insulator, and is charged with a given amount of electric charge
Implementation Method 2
which is charged during manufacturing to create a region with low electron concentration, reducing the off-state current by balancing the electron injection and elimination forces
Data Source
AI summary
A structure with which the zero current of a field effect transistor using a conductor-semiconductor junction can be reduced is provided. A floating electrode (102) including a conductor or a semiconductor and being enclosed by an insulator (104) is formed between a semiconductor layer (101) and a gate (105) so as to cross the semiconductor layer (101) and the floating electrode (102) is charged, whereby carriers are prevented from flowing from a source electrode (103a) or a drain electrode (103b). Accordingly, a sufficiently low carrier concentration can be kept in the semiconductor layer (101) and thus the zero current can be reduced.