Floating Gate ETOX Transistor Structure for Lower Voltage Operation
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Solution Overview
Problem
Conventional semiconductor devices with floating gate ETOX structures have complex structures and manufacturing processes, requiring high write and erase voltages, which complicates their production and application in data storage systems.
Innovation Solution
A semiconductor device design featuring a first transistor and a second transistor with a floating gate ETOX structure, where both transistors are formed using the same material and processed in the same steps, including a semiconductor substrate, gate dielectric layers, and polycrystalline silicon electrodes, simplifying the structure and manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional ETOX structure is used, then data storage function is achieved, but high write voltage and high erase voltage are required
Solution Approach 1:
The patent changes the electrical parameters by introducing a floating gate electrode that can store charge, enabling the device to operate at lower voltages while maintaining data storage functionality. The floating gate captures and holds charge packets that represent data states, reducing the voltage requirements for write and erase operations compared to conventional ETOX structures.
2Speed
If a semiconductor floating gate ETOX structure is used, then operating speed is improved, but structure complexity increases
Solution Approach 1:
The patent merges the floating gate electrode with the gate dielectric layer structure, where the floating gate is formed as an integrated component within the gate stack. This merging approach achieves high-speed operation equivalent to DRAM while avoiding the need for completely separate complex structures, as the floating gate is incorporated into the existing transistor architecture.
Solution Approach 2:
The floating gate electrode serves multiple functions: it acts as a control electrode for the transistor, a charge storage element for data storage, and a means to achieve high-speed operation. This multi-functionality reduces the need for additional specialized components that would increase structural complexity.
3Reliability
If a well-known semiconductor floating gate ETOX structure is used, then data storage performance is achieved, but manufacturing process complexity increases
Solution Approach 1:
The patent segments the gate structure into distinct functional layers: a gate dielectric layer and a floating gate electrode formed thereon. This segmentation allows each component to be optimized and manufactured using standard semiconductor processing techniques, simplifying the overall manufacturing process while maintaining data storage performance.
Solution Approach 2:
The floating gate electrode is formed using the same polycrystalline silicon material and processing steps as other gate electrodes in the device, creating structural homogeneity. This uniformity in material and fabrication process reduces manufacturing complexity by eliminating the need for specialized processing lines or materials.
Data Source
AI summary
A semiconductor device includes a substrate, a first transistor, and a second transistor. The first transistor includes a first source terminal formed of a material and connected to a first source, a first drain terminal formed of the material and connected to a first drain, a first gate overlapping a portion of the substrate that is between the first source and the first drain, and a first dielectric layer between the first gate and the substrate. The second transistor includes a control gate formed of the material and overlapping a part of the substrate that is positioned between a second source and a second drain, a second dielectric layer between the control gate and the substrate, a floating gate extending through the second dielectric layer to contact a doped region in the substrate, and an insulating member positioned between the control gate and the floating gate.