Floating-Gate LED Component for Nonvolatile Brightness Control
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Solution Overview
Problem
Existing optoelectronic components, such as light-emitting diode components using transistors, face challenges in achieving compact size, efficient energy use, and rapid switching while maintaining stable brightness settings.
Innovation Solution
The integration of a field-effect transistor and a light-emitting diode in a monolithic structure, where the transistor's isolated gate electrode functions as a nonvolatile memory to store brightness settings, allowing for simple, cost-effective, and energy-efficient operation by applying a charge to the gate electrode to set and maintain desired brightness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If separate mounting of transistor and LED is used, then ease of manufacture is improved, but device complexity and external dimensions increase
Solution Approach 1:
The patent merges the transistor and LED into a single monolithic optoelectronic component fabricated on one semiconductor chip. This integration eliminates the need for separate mounting and external connections, thereby reducing external dimensions while maintaining manufacturing feasibility through standard semiconductor fabrication processes.
Solution Approach 2:
The patent transitions from a three-dimensional assembly of separate components to a two-dimensional planar integration on a single chip. By laying out the transistor and LED structures in the same plane and connecting them through internal conductive paths, the component achieves compactness without sacrificing manufacturing ease.
2Ease of manufacture
If separate mounting of transistor and LED is used, then ease of manufacture is improved, but device complexity increases
Solution Approach 1:
The patent combines multiple functions (transistor switching and LED light emission) into a single integrated structure. This merging reduces device complexity by eliminating the need for external wiring, mounting hardware, and separate control circuits, while maintaining ease of manufacture through unified fabrication.
3Use of energy by moving object
If floating gate transistor is used, then energy use is improved, but device complexity increases
Solution Approach 1:
The floating gate transistor stores the brightness control charge in advance on its isolated gate electrode. This preliminary action allows the LED to maintain a stable brightness level without continuous energy input, reducing ongoing energy consumption while the added complexity of the floating gate structure is justified by the energy-saving benefit.
4Volume of moving object
If monolithic integration is used, then external dimensions are reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent integrates the transistor and LED into a monolithic structure where both components are fabricated simultaneously on the same chip using standard semiconductor processes. This approach reduces external dimensions while managing manufacturing precision requirements through established fabrication techniques that ensure proper alignment and electrical connections.
5Speed
If monolithic integration is used, then switching speed is improved, but device complexity increases
Solution Approach 1:
The patent merges the transistor and LED into a single integrated component, enabling direct electrical connection without external wiring. This integration eliminates transmission delays and parasitic inductances, achieving high-speed switching performance while the increased internal complexity is offset by the elimination of external complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables compact external dimensions, efficient energy use, and high-speed switching with stable brightness settings, reducing the need for external connections and allowing one-time setting of brightness that persists until changed.
Implementation Method 1
The isolated gate electrode of the field-effect transistor configured as a floating gate transistor forms a nonvolatile memory here, in which a desired brightness value remains stored until it is changed
Implementation Method 2
a light-emitting diode formed in a second partial chip having an anode and a cathode
Implementation Method 3
The light-emitting diode and a channel of the field-effect transistor are electrically connected in series
Data Source
AI summary
An optoelectronic component comprises a field effect transistor that is implemented in a first die and has a source and a sink. The field effect transistor is implemented as a floating-gate transistor with a control electrode and an isolated gate electrode. The optoelectronic component further comprises a light diode that is implemented in a second die and has an anode and a cathode. The second die is arranged on an upper side of the first die. The light diode and a channel of the field effect transistor are electrically connected in series.