Floating-Gate Sensor for Self-Powered Event Timestamping
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Solution Overview
Problem
Existing self-powered sensors, such as p-HEI sensors, face limitations in detecting events below a certain energy threshold and lack the ability to record timestamps due to high energy requirements and asynchronous data storage processes, while trap-assisted quantum tunneling approaches are difficult to implement reliably.
Innovation Solution
A sensor system utilizing an array of memory devices with floating-gate transistors that leak electrons at a predetermined rate through Fowler-Nordheim tunneling, where the sensor signal modulates the energy barrier to change the electron leakage rate, allowing for the storage of event data and timestamps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If p-HEI sensors use high energy threshold to store sensor data, then data storage is achieved, but the ability to sense events below the threshold is limited
Solution Approach 1:
The patent changes the fundamental parameter of energy storage from discrete threshold-based storage (p-HEI) to continuous analog storage. The floating-gate transistor stores charge continuously, allowing the detection of sub-threshold events through incremental charge accumulation over time, while maintaining reliable data storage through the non-volatile nature of floating-gate memory.
Solution Approach 2:
The patent introduces dynamic timestamp recording by continuously monitoring the charge state of the floating-gate transistor over time. Events are timestamped based on when they occur in the monitoring period, transforming the static threshold-based storage into a dynamic system that captures both event occurrence and timing information.
2Power
If p-HEI sensors use asynchronous electron injection process, then energy barrier crossing is achieved, but timestamp recording capability is lost
Solution Approach 1:
The patent implements continuous charge accumulation on the floating-gate transistor throughout the monitoring period, rather than asynchronous injection events. This continuous action enables the system to maintain energy efficiency while simultaneously recording timestamp information through the temporal progression of charge accumulation that can be analyzed after retrieval.
3Measurement precision
If trap-assisted quantum tunneling is used for event detection, then timestamp capability is provided, but implementation reliability varies across CMOS processes
Solution Approach 1:
The patent uses the floating-gate transistor's inherent non-volatile memory特性 to automatically store charge states without requiring external intervention or calibration. The device serves itself by utilizing the natural charge retention properties of the floating-gate structure, eliminating the need for process-specific calibration that plagues quantum tunneling approaches.
Solution Approach 2:
The patent copies the successful mechanism of floating-gate memory (widely used in commercial flash memory) and adapts it for sensor applications. This proven technology provides consistent, reliable operation across different CMOS processes, avoiding the implementation variability of emerging quantum tunneling techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient detection and timestamping of events with lower energy requirements and reliable data storage, overcoming the limitations of existing technologies by continuously leaking electrons and modulating the energy barrier to identify events and reconstruct measurement values and timestamps.
Implementation Method 1
The sensing interface has an energy barrier configured to leak electrons at a predetermined electron leakage rate through Fowler-Nordheim (F-N) tunneling
Implementation Method 2
An input to the sensing interface is configured to alter a geometry of the energy barrier to change the electron leakage rate
Data Source
AI summary
A sensor system for detecting events includes an array of memory devices and a read-out interface. Each memory device includes a floating-gate with a sensing interface, the sensing interface having an energy barrier configured to leak electrons at a predetermined electron leakage rate through Fowler-Nordheim (F-N) tunneling. An an input to the sensing interface is configured to alter a geometry of the energy barrier to change the electron leakage rate. The read-out interface is communicatively coupled to at least one memory device, and is configured to retrieve data stored on the at least one memory device for analysis.