Conductive Floating Gates for Terahertz Radiation Management
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Solution Overview
Problem
Existing terahertz and far infrared detectors and sources face challenges due to the large difference between the THz electromagnetic wavelength and device dimension, requiring complex connections for maintaining a consistent potential difference between gates and channels, which is difficult to achieve.
Innovation Solution
Semiconductor devices with conductive floating gates superimposed or embedded within the conducting channel, allowing for the management of electromagnetic radiation by modulating plasma waves, eliminating the need for multiple complex connections and enabling efficient detection and emission of terahertz and microwave radiation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If complex connections are used to maintain consistent potential difference between gates and channels, then device performance can be improved, but device complexity increases significantly
Solution Approach 1:
The patent merges the gate and channel structures by superimposing conductive floating gates directly onto the conducting channel, eliminating the need for separate complex connection structures. This integration maintains consistent potential difference while significantly reducing device complexity.
Solution Approach 2:
The conductive floating gates are embedded within or superimposed on the conducting channel, creating a nested structure where the gate is positioned inside or on top of the channel region. This nesting approach allows for direct control of channel potential without requiring external complex connections.
2Reliability
If multiple complex connections are implemented to manage electromagnetic radiation, then detection and emission capabilities are improved, but manufacturing difficulty increases
Solution Approach 1:
The device is segmented into distinct functional regions with conductive floating gates positioned at specific locations along the conducting channel. This segmentation allows for simplified manufacturing of each section while maintaining overall detection and emission capabilities through the coordinated operation of segmented elements.
Solution Approach 2:
The conductive floating gates are positioned at specific locations where they are needed for electromagnetic radiation management, rather than requiring uniform complex connections throughout the entire device. This local quality approach improves manufacturing ease by concentrating complexity only where necessary.
3Device complexity
If conventional structures are used, then device simplicity is maintained, but voltage drop issues occur affecting synchronized operation
Solution Approach 1:
The conductive floating gates act as intermediary elements between the voltage source and the conducting channel, providing localized potential control that compensates for voltage drops. This intermediary structure maintains synchronized operation while keeping the overall device relatively simple.
Solution Approach 2:
The conductive floating gates are designed to create equipotential regions within the conducting channel, ensuring that different sections operate at consistent potentials despite voltage drops in the channel. This equipotentiality approach maintains synchronized operation without requiring complex external connections.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of conductive floating gates allows for synchronized operation of device sections, overcoming voltage drop issues and enhancing the detection and emission capabilities of terahertz and microwave radiation, enabling efficient manipulation and conversion of electromagnetic radiation.
Implementation Method 1
allowing for the management of electromagnetic radiation by modulating plasma waves
Implementation Method 2
enabling efficient detection and emission of terahertz and microwave radiation
Implementation Method 3
enabling efficient detection and emission of terahertz and microwave radiation
Data Source
AI summary
Semiconductor devices having conductive floating gates superimposed on and/or embedded within a conducting channel for managing electromagnetic radiation in the device. The conductive floating gates can comprise a one- or two-dimensional array of asymmetric structures superimposed on and/or embedded within the conducting channel. The conductive floating gates can comprise Nb2N, Ta2N, TaNx, NbNx, WNx, or MoNx or any transition metal nitride compound. The device can include a plurality of conductive floating gates on a rear surface of a barrier layer, wherein each of the conductive floating gates might be separately biased for individual tuning. Antennas for capturing or emitting THz or sub-THz radiation could be attached to the device contacts. Terahertz or infrared radiation could be manipulated by driving a current through the conducting channel into a plasmonic boom regime. Additional manipulation of the electromagnetic radiation could be achieved by having antennas with an appropriate phase angle shift.