Floating Metal Node Flash Memory Electron Leakage
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Solution Overview
Problem
Conventional logic-compatible flash memory devices with a floating gate structure are susceptible to electron leakage, leading to data corruption and memory failure due to the inherent nature of floating-gate transistors.
Innovation Solution
A new non-volatile synapse memory device structure is introduced, featuring a floating metal node insulated by multiple capacitors, which reduces electron leakage by providing enhanced charge storage and retrieval mechanisms.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a floating gate structure is used in logic-compatible flash memory, then non-volatile data storage is achieved, but electron leakage occurs leading to data corruption and memory failure
Solution Approach 1:
The patent introduces an intermediary oxide layer between the floating gate and the channel region. This oxide layer acts as a barrier that prevents electron leakage from the floating gate to the channel, thereby maintaining data retention while eliminating the harmful electron leakage effect. The intermediary layer physically separates the charge storage region from the conduction path.
2Quantity of substance
If smaller transistors and thinner oxides are used to increase density, then integration density improves, but electron leakage susceptibility increases
Solution Approach 1:
The patent applies local quality by making the oxide layer thickness non-uniform: thinner oxide in the channel region for high density and stronger electron blocking capability, and thicker oxide at the floating gate interface for enhanced electron leakage prevention. This localized variation in oxide thickness allows simultaneous achievement of high integration density and reduced electron leakage.
3Ease of manufacture
If hot-electron injection or Fowler-Nordheim tunneling is used for programming, then data writing capability is achieved, but precise voltage control is required
Solution Approach 1:
The patent employs beforehand cushioning by designing the oxide layer thickness and material composition to provide a built-in buffer against voltage variations. The oxide layer acts as a cushion that absorbs excess voltage stress during programming operations, reducing the sensitivity to precise voltage control requirements while maintaining effective hot-electron injection and Fowler-Nordheim tunneling capabilities.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed memory device effectively mitigates electron leakage, improving data retention and longevity by utilizing a floating metal node insulated by capacitors, thereby enhancing the reliability of flash memory.
Implementation Method 1
a floating metal configured to protect stored charges, wherein the floating metal is a metal node insulated by a plurality of capacitors
Implementation Method 2
the floating metal is a metal node insulated by a plurality of capacitors
Implementation Method 3
providing enhanced charge storage and retrieval mechanisms
Data Source
AI summary
A non-volatile memory cell device is designed with a floating metal node connected through capacitors. The non-volatile synapse memory device comprises: a plurality of input signal lines, including a first word line, a second word line, and a third word line in parallel; a pair of output signal lines in parallel, including a first bit line and a second bit line; a pair of translators, including a write transistor and a read transistor; and a floating metal configured to protect stored charges, wherein the floating metal is a metal node insulated by a plurality of capacitors.