Floating Metal Layer Semiconductor Structure for Heat Dissipation

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Solution Overview

Problem

Traditional power semiconductor components face challenges in heat dissipation, limiting the increase in power capacity due to insufficient thermal management.

Innovation Solution

A semiconductor component design featuring a metal layer floated on the semiconductor working layer, with controlled areas of the metal layer and conducting electrodes, enhances thermal conductivity by isolating the metal layer electrically from the conducting electrodes and utilizing a thermoelectric separating substrate for improved heat dissipation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If the power of power semiconductor component is increased, then the power conversion efficiency is improved, but the heat dissipation problem worsens

Engineering Contradiction:

Improvepower conversion efficiencyVSAvoidheat dissipation

Core Design Contradiction:

PowerVSTemperature

Solution Approach 1:

The patent segments the metal layer into multiple isolated floating metal layers, each serving as an independent heat dissipation zone. This segmentation allows heat to be distributed across multiple separate regions rather than concentrated in one area, improving overall heat dissipation efficiency while maintaining high power operation capability

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The floating metal layers act as intermediary thermal management elements between the semiconductor working layer and the external environment. These metal layers serve as intermediate heat transfer mediators, conducting heat away from the active semiconductor regions without directly contacting the conducting electrodes, thus resolving the heat dissipation issue while preserving electrical functionality

Inventive Principle:

Principle #24Intermediary (Mediator)

2Temperature

If a metal layer is added to improve heat dissipation, then the thermal conduction is improved, but the electrical insulation complexity increases

Engineering Contradiction:

Improveheat dissipation performanceVSAvoidelectrical insulation structure

Core Design Contradiction:

TemperatureVSDevice complexity

Solution Approach 1:

The patent merges the heat dissipation function with the existing insulating layer structure by embedding floating metal layers within the insulating material. This combination eliminates the need for separate thermal management structures, as the metal layers are integrated into the insulation framework, simplifying the overall device architecture while achieving both electrical insulation and thermal conduction

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The floating metal layers serve multiple functions simultaneously: they provide thermal conduction pathways for heat dissipation, act as electrical insulation barriers when embedded in insulating material, and maintain structural integrity of the device. This multi-functionality reduces the need for additional specialized components, thereby reducing overall device complexity

Inventive Principle:

Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design effectively increases heat dissipation performance, enabling higher power semiconductor devices by optimizing the thermal conduction paths and areas, suitable for applications exceeding 100 watts.

Implementation Method 1

heat dissipation performance of the semiconductor component can be increased

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS12538795B2Semiconductor component and semiconductor device

Publication Date: 2026.01.27 GANSTRONIC INC

AI summary

A semiconductor component is provided in the present invention. The semiconductor component includes a substrate, a semiconductor working layer disposed on the substrate, an insulating layer disposed on an upper surface of the semiconductor working layer, plural conducting electrodes, and at least a metal layer floated on the upper surface of the semiconductor working layer and within the insulating layer. The conducting electrodes include plural working electrodes disposed within the insulating layer and plural connecting electrodes disposed over the upper surface of the semiconductor working layer. By floating the at least a metal layer on the semiconductor working layer and controlling occupied area of the metal layer and the conducting electrodes on the upper surface of the semiconductor working layer, heat dissipation performance of the semiconductor component can be effectively increased.