Floating Semiconductor Substrate Structure for Low-Dislocation Separation
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Solution Overview
Problem
Current semiconductor substrate manufacturing methods face challenges in reducing threading dislocation density and alleviating stress on semiconductor devices, leading to defects and cracks during the separation process.
Innovation Solution
A semiconductor substrate design featuring a main substrate with a seed portion and first and second semiconductor parts arranged side by side, where the semiconductor parts are grown using the epitaxial lateral overgrowth method, allowing for a floating state and a hollow portion between the main substrate and the semiconductor parts, which reduces dislocation density and facilitates easy separation by breaking tether portions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If semiconductor parts are grown directly on the main substrate, then manufacturing process is simple, but threading dislocation density is high and stress accumulates
Solution Approach 1:
The substrate structure is segmented into three distinct parts: the main substrate, the seed portion, and the floating semiconductor parts. This segmentation allows the semiconductor parts to be grown on a separate seed portion that can be detached, thereby reducing threading dislocation density while maintaining manufacturing feasibility through modular processing steps.
Solution Approach 2:
The seed portion acts as an intermediary between the main substrate and the floating semiconductor parts. It serves as a temporary growth platform that enables the formation of high-quality semiconductor structures with reduced dislocation density, and can be subsequently removed to leave the semiconductor parts in a floating state above the main substrate.
2Reliability
If semiconductor parts are grown directly on the main substrate, then manufacturing process is simple, but stress on semiconductor devices increases causing defects and cracks
Solution Approach 1:
By segmenting the substrate structure into a main substrate, seed portion, and floating semiconductor parts, the invention isolates the semiconductor parts from stress transmitted through the main substrate. This segmentation enables stress relief while the manufacturing process remains manageable through systematic processing steps including growth, patterning, and selective removal.
Solution Approach 2:
The seed portion is extracted from the final device structure after serving its purpose as a growth template. This extraction removes the source of stress and dislocations from the semiconductor parts, improving device reliability. The manufacturing process handles this extraction as a controlled step, balancing complexity with quality improvement.
3Ease of operation
If semiconductor parts are in contact with the main substrate, then structural support is provided, but separation process becomes difficult and causes damage
Solution Approach 1:
The seed portion serves as a temporary intermediary that provides structural support during the growth and processing stages. After the semiconductor parts are formed, the seed portion can be selectively removed, enabling easy separation of the floating semiconductor parts from the main substrate without causing damage, as the structural support function is temporarily fulfilled by the removable seed portion.
Solution Approach 2:
The seed portion is discarded after completing its function as a growth template and temporary support structure. This discarding enables the semiconductor parts to be separated from the main substrate without damage, as the seed portion is removed rather than requiring forceful separation of permanently bonded structures. The process recovers the functional semiconductor parts while sacrificing the temporary seed structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively reduces threading dislocation density and alleviates stress on semiconductor devices, enabling the formation of high-quality active regions with reduced defects and cracks during separation, enhancing the production of semiconductor devices like LEDs and lasers.
Implementation Method 1
a seed portion SD located higher than the main substrate 1, and a first semiconductor part 8F and a second semiconductor part 8S arranged side by side in a first direction (Y direction), and the first semiconductor part 8F and the second semiconductor part 8S are in contact with the seed portion SD
Data Source
AI summary
A main substrate, a seed portion (SD) located higher than the main substrate, and first and second semiconductor parts (8F and 8S) arranged side by side in a first direction (9Y direction) are provided. The first and second semiconductor parts are in contact with the seed portion, a longitudinal direction of the seed portion (SD) is the first direction (Y direction), and a hollow portion (VD) is located between the main substrate (1) and each of the first semiconductor part and the second semiconductor part.