Floating Via Cell Deck Layout for 3D Memory Protection

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Solution Overview

Problem

The challenge in integrated circuit fabrication is to increase integration density while minimizing manufacturing defects, particularly in three-dimensional memory devices where memory cells are prone to damage during processing, leading to defects and reduced device functionality.

Innovation Solution

Incorporating floating vias within the cell deck, which provide mechanical support and protection to memory cells during manufacturing, especially during the chemical-mechanical polishing process, by being electrically isolated and distributed throughout the deck to maintain via density and prevent damage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If memory cells are vertically stacked to increase integration density, then integration density is improved, but manufacturing defects increase due to damage during processing

Engineering Contradiction:
Improveintegration densityVSAvoidmanufacturing defect rate
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The patent applies preliminary action by forming protective cap structures and sacrificial material layers before the memory cells are fully fabricated and stacked. These protective features are prepared in advance to prevent damage during subsequent manufacturing processes such as chemical-mechanical polishing and mask removal, thereby resolving the contradiction between high integration density and manufacturing reliability

Inventive Principle:
Principle #10Preliminary action

2Manufacturing precision

If chemical-mechanical polishing is used to remove mask material, then manufacturing precision is improved, but memory cells suffer mechanical damage

Engineering Contradiction:
Improvemask removal precisionVSAvoidmechanical damage to memory cells
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The patent implements beforehand cushioning by forming cap structures over the memory cells and introducing sacrificial material layers before the chemical-mechanical polishing process. These protective features absorb mechanical stress and prevent direct contact between the polishing tools and the memory cells, thereby maintaining manufacturing precision while preventing mechanical damage

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

3Reliability

If via density is increased to improve device functionality, then device performance is improved, but manufacturing complexity increases

Engineering Contradiction:
Improvedevice functionalityVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies universality by designing the cap structures and sacrificial material layers to serve multiple functions simultaneously: they protect memory cells during manufacturing, maintain via density distribution, and facilitate mask removal. This multi-functionality allows high via density to be achieved without proportionally increasing manufacturing complexity, as the same structures provide both protection and process control

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS11770928B2Devices including floating vias
Publication Date: 2023.09.26 MICRON TECHNOLOGY INC
  • US11770928B2 patent drawing
  • US11770928B2 patent drawing
  • US11770928B2 patent drawing

AI summary

A device has memory cells located within a cell deck of the device. The device includes functional vias within the cell deck, and one or more floating vias within the cell deck. The functional vias are electrically coupled to conductive structures of the device and the one or more floating vias have at least one end electrically isolated from the conductive structures of the device. Methods of forming a device may include forming memory cells in a cell deck, and forming floating vias in a dielectric material adjacent to the memory cells. An overlying mask material is removed from the dielectric material, and at least some memory cells are protected from mechanical damage during the removal of the overlying mask material with the floating vias. Electronic systems may include such devices.