Flow Guide Tube Reaction Chamber for Uniform Wafer Oxidation

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Solution Overview

Problem

In semiconductor technology, the oxidation process of wafers using microwave plasma often results in uneven plasma distribution, leading to reduced concentration of oxygen free radicals on the wafer surface, which in turn affects the growth rate and quality of silicon dioxide.

Innovation Solution

A reaction chamber with a flow guide tube is designed to converge plasma from an opening to the top surface of the wafer, ensuring higher plasma concentration and reducing diffusion to areas outside the wafer, thereby enhancing the growth rate and quality of silicon dioxide.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If plasma is transported into the chamber body through the opening without a flow guide tube, then the plasma can enter the chamber body, but the plasma diffuses to areas outside the wafer top surface, reducing plasma concentration on the wafer surface

Engineering Contradiction:
Improveplasma concentration on wafer surfaceVSAvoidplasma loss to areas outside wafer
Core Design Contradiction:
Quantity of substanceVSLoss of energy

Solution Approach 1:

The flow guide tube acts as an intermediary component between the plasma source and the wafer surface. It guides and directs the plasma flow along its internal passage, ensuring the plasma reaches the intended target area (wafer top surface) without diffusing to surrounding areas, thus preventing plasma loss and maintaining high plasma concentration at the reaction zone.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The flow guide tube creates a localized plasma delivery system where the plasma is concentrated and directed precisely to the wafer top surface. The tube structure ensures that plasma properties (concentration, direction) are optimized locally at the wafer surface rather than being dispersed throughout the entire chamber body.

Inventive Principle:
Principle #3Local quality

2Productivity

If the flow guide tube is arranged between the opening and the wafer stage, then the plasma concentration on the wafer surface increases, but the device complexity increases due to the additional tube structure

Engineering Contradiction:
Improvegrowth rate of silicon dioxideVSAvoidstructure complexity with flow guide tube
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The flow guide tube is designed as a segmented structure with distinct components: a tube body with a gas inlet at one end and a gas outlet at the other end. This segmentation allows for modular assembly, easier manufacturing, and simplified maintenance while achieving the complex function of plasma guidance and concentration.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution increases the plasma concentration on the wafer surface, improving the growth rate and quality of silicon dioxide films by directly guiding plasma to the wafer surface, reducing plasma loss and ensuring uniform coverage.

Implementation Method 1

the gas mixture (microwave plasma) of oxygen and hydrogen is dissociated into a plasma rich in oxygen free radicals through a microwave plasma source

Methodology Applied
Scientific EffectMicrowave plasma: Microwave Radiation

Implementation Method 2

a gas outlet at other end of the tube body extends toward the reaction area and is used to transport the plasma to the top surface of the reaction area

Methodology Applied
Scientific EffectGas flow: Convection

Data Source

PatentUS20240412950A1Reaction chamber and oxidation device
Publication Date: 2024.12.12 BEIJING E TOWN SEMICON TECH CO LTD
  • US20240412950A1 patent drawing
  • US20240412950A1 patent drawing
  • US20240412950A1 patent drawing

AI summary

Provided is a reaction chamber and an oxidation device. The reaction chamber includes a chamber body and a flow guide tube. The chamber body is provided with a wafer stage inside, the wafer stage forms a reaction area for accommodating a wafer, a top surface of the reaction area is not lower than a top surface of the wafer, and a side wall of the chamber body is provided with an opening. The flow guide tube is arranged inside the chamber body, the flow guide tube comprises a tube body, a gas inlet of the tube body is communicated with the opening, and a gas outlet of the tube body extends toward the reaction area and is used to transport the plasma to the top surface of the reaction area.