Plasma Chamber Flow Optimizer Ring for Etch Rate
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Solution Overview
Problem
Current methods to increase etch rate in wafer processing, such as boosting reactant species through higher RF power or gas flow, lead to degradation of structural profiles and reduced etch uniformity, along with increased energy and chemical costs.
Innovation Solution
A 'donut' or ring-shaped plate, referred to as a flow optimizer, is positioned between the plasma region and the wafer support in a plasma chamber to funnel existing reactant species closer to the wafer surface, enhancing the etch rate without increasing process gas flow or RF power.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If higher RF power is applied to generate more reactant species, then etch rate increases, but structural profile degradation occurs
Solution Approach 1:
The plasma chamber is segmented into distinct regions by the flow optimizer ring structure, which divides the plasma volume to create controlled flow paths that direct reactant species toward the substrate while maintaining profile integrity
Solution Approach 2:
The flow optimizer acts as an intermediary component between the plasma generation region and the substrate, mediating the flow of reactant species to enhance etch rate while preserving structural profiles through controlled distribution
2Productivity
If process gas flow is increased to increase reactant species, then etch rate increases, but etch uniformity decreases
Solution Approach 1:
The flow optimizer creates local variations in reactant species distribution by directing flow through specific pathways, ensuring uniform etching across the substrate surface while maintaining high overall etch rate through optimized local flow characteristics
3Productivity
If higher RF power is applied to increase reactant species, then etch rate increases, but energy consumption increases
Solution Approach 1:
The flow optimizer utilizes the existing plasma environment and reactant species flow dynamics to enhance etch rate, allowing the system to improve productivity by optimizing the utilization of already-generated species rather than requiring additional energy input for species generation
4Productivity
If higher process gas flow is used to increase reactant species, then etch rate increases, but chemical consumption increases
Solution Approach 1:
The flow optimizer changes the flow distribution parameters within the plasma chamber, redirecting reactant species to improve etch rate without requiring increases in overall gas flow rate, thereby maintaining chemical consumption at acceptable levels while enhancing productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves etch rate without degrading structural profiles or reducing etch uniformity, leveraging existing reactant species to achieve higher efficiency without additional energy or chemical consumption.
Implementation Method 1
Vacuum created by a pump disposed in a bottom portion of the plasma chamber causes the reactant species to flow down toward the pump
Implementation Method 2
The donut shaped plate disposed in the process chamber is positioned such that an opening of the donut shaped plate is aligned over the wafer support in the plasma chamber. As the reactant species flows toward the bottom of the plasma chamber, the opening in the donut shaped plate forces a fraction of the reactant species of the plasma to pass close to the top surface of the wafer
Implementation Method 3
The flow optimizer funnels the existing reactant species away from the side walls of the plasma chamber toward the wafer surface, thereby increasing the amount of reactant species applied to the wafer surface
Data Source
AI summary
A flow optimizer is disclosed for use in plasma chamber. The flow optimizer includes a ring that is disposed between a wafer support and a dielectric window defined in the plasma chamber. The ring of the flow optimizer is configured to be positioned between the wafer support and the dielectric window so that an outer edge of the ring is adjacent to side walls of the plasma chamber and an opening of the ring is substantially aligned with a diameter of the wafer support.