Flow Disruption Protrusions for Uniform Semiconductor Deposition

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Solution Overview

Problem

Existing semiconductor processing chambers face limitations in gas flow adjustability, residence time, and deposition uniformity, particularly in laminar flow conditions, which affect element concentration and device performance.

Innovation Solution

Incorporation of disruptive flow protrusions in the processing chamber to adjust gas flow patterns, including swirls, eddies, and turbulence, by extending from a plate into the gas flow path between the substrate support and the plate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If laminar flow is used for deposition, then growth rate selectivity is improved, but element concentration and deposition uniformity are limited

Engineering Contradiction:

Improvedeposition uniformityVSAvoidelement concentration

Core Design Contradiction:

Manufacturing precisionVSQuantity of substance

Solution Approach 1:

The patent applies parameter changes by transitioning from laminar flow to turbulent flow conditions. This is achieved by controlling gas flow rates, pressure conditions, and chamber geometry to generate turbulent flow patterns that enhance mixing and transport of reactive species, thereby improving both element concentration and deposition uniformity simultaneously

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent implements dynamics by creating controllable turbulent flow conditions that can be adjusted during processing. The system allows dynamic control of flow patterns through variable gas flow rates and pressure conditions, enabling optimization of both growth rate selectivity and element concentration based on process requirements

Inventive Principle:

Principle #15Dynamics

2Manufacturing precision

If substrate rotation is used to improve deposition uniformity, then adjustment difficulty increases

Engineering Contradiction:

Improvedeposition uniformityVSAvoidadjustment difficulty

Core Design Contradiction:

Manufacturing precisionVSEase of operation

Solution Approach 1:

The patent replaces the mechanical substrate rotation system with a gas flow-based solution. By using turbulent flow patterns generated through specific gas inlet configurations and pressure control, the system achieves deposition uniformity without requiring mechanical rotation, thereby eliminating the complexity of rotation speed control and synchronization

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

3Manufacturing precision

If low flow rates are used to improve deposition control, then gas activation difficulty increases

Engineering Contradiction:

Improvedeposition controlVSAvoidgas activation energy

Core Design Contradiction:

Manufacturing precisionVSUse of energy by moving object

Solution Approach 1:

The patent applies parameter changes by operating at elevated pressure conditions (e.g., 1-100 Torr) rather than low pressure. This pressure increase enhances gas phase reactions and activation processes, allowing effective gas activation even at lower flow rates, thereby reducing the energy required for gas activation while maintaining precise deposition control

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enhances deposition uniformity, adjusts element concentration, improves gas activation, and increases throughput by allowing for adjustable gas flow patterns, velocities, and residence times, while reducing chamber downtime.

Implementation Method 1

one or more protrusions extending from the plate towards the substrate support into the gas flow path to disrupt a flow of the gas in the gas flow path

Methodology Applied

Scientific EffectTurbulence: Turbulence

Implementation Method 2

disruptive flow protrusions to adjust gas flow

Methodology Applied

Scientific EffectFlow disruption: Flow Separation

Implementation Method 3

thermally decomposing the process gas to deposit a material from the gas onto the substrate surface

Methodology Applied

Scientific EffectThermal decomposition: Pyrolysis

Implementation Method 4

depositing a material, such as a dielectric material or a semiconductive material, on an upper surface of the substrate

Methodology Applied

Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Data Source

PatentUS20260028750A1Disruptive flow protrusions to adjust flow, and related chamber kits, methods, and processing chambers

Publication Date: 2026.01.29 APPLIED MATERIALS INC

AI summary

The present disclosure relates to semiconductor processing chambers, and more particularly, to disruptive flow protrusions to adjust gas flow. In one or more embodiments, a processing chamber includes a substrate support, a plate above the substrate support, one or more gas inlets to provide gas that flows across a gas flow path between the plate and the substrate support, and one or more protrusions extending from the plate towards the substrate support into the gas flow path to disrupt a flow of the gas in the gas flow path.