Flow Control Ring Gas Injection for Uniform Wafer Chamber Mixing
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Solution Overview
Problem
Existing wafer processing apparatuses face challenges in achieving uniform gas mixing, which affects wafer uniformity, especially when using multiple gases in reaction chambers with or without a Remote Plasma Unit (RPU).
Innovation Solution
A gas injection system comprising a flow control ring and an outer body with gas tunnels, where the retaining ring has holes for injecting gas, allowing for controlled gas mixing with adjustable injection angles and lengths to optimize gas distribution within the reaction chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gas is injected through a simple structure without flow control components, then device complexity is reduced, but gas mixing uniformity deteriorates
Solution Approach 1:
The gas injection system is divided into multiple functional segments: gas tunnels for gas supply, a flow control ring with multiple holes for gas distribution, and an outer body with sealing parts. This segmentation allows each component to perform its specific function optimally, achieving uniform gas mixing through the coordinated action of multiple specialized elements rather than a single complex structure.
Solution Approach 2:
The flow control ring features holes with specific injection angles (0-80 degrees) and the gas tunnels have optimized flow paths. These localized structural qualities at critical positions enable precise control of gas flow distribution, creating uniform mixing patterns without requiring complex overall system design. The sealing part between the flow control ring and outer body also provides localized sealing quality to maintain pressure distribution.
2Adaptability or versatility
If multiple gases are injected into the reaction chamber, then wafer processing capability is improved, but gas mixing uniformity deteriorates
Solution Approach 1:
The gas injection system is designed with universal functionality to handle multiple gas types through the same structural framework. The flow control ring with its array of holes and the outer body with gas tunnels can accommodate different gas combinations (reactant gas and precursor, or source gas with RPU) without requiring structural modification. This multi-functional design achieves uniform mixing for various gas combinations while maintaining processing versatility.
Solution Approach 2:
The flow control ring acts as an intermediary component between the gas tunnels and the reaction chamber. It receives multiple gas types from the gas tunnels and redistributes them uniformly through its holes with optimized injection angles. This intermediary structure mediates the mixing process, ensuring uniform distribution of multiple gases before they enter the reaction chamber, thereby maintaining mixing uniformity regardless of gas composition.
3Area of stationary object
If the flow control ring has larger dimensions, then gas distribution coverage is improved, but manufacturing precision deteriorates
Solution Approach 1:
The flow control ring utilizes three-dimensional spatial arrangement of holes with varying injection angles (0-80 degrees) to achieve comprehensive gas distribution coverage. Instead of simply increasing the ring's planar dimensions, the design employs angular dimensionality to direct gas flows in multiple directions, expanding effective coverage while maintaining precise control over each hole's injection parameters. This dimensional approach allows large coverage area without sacrificing manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system enhances gas mixing efficiency, ensuring uniform gas distribution and improving wafer processing outcomes by allowing for precise control of gas flow paths and injection angles, thereby enhancing wafer uniformity.
Implementation Method 1
a gas space is formed and sealed between the flow control ring and the outer body to contain gas from the at least one gas tunnel to be injected through the plurality of holes
Data Source
AI summary
A gas input structure for providing gas used in a wafer processing chamber is presented. The structure comprising a flow control ring having a sealing part and a retaining ring; and an outer body configured to encircle the flow control ring, the outer body having at least one gas tunnel, the at least one gas tunnel comprising a gas inlet, a gas outlet, and a gas flow path connecting the gas inlet and the gas outlet; wherein the retaining ring has a plurality of holes; and wherein a sealed gas space is formed between the flow control ring and the outer body, the sealed gas space containing a gas from the at least one gas tunnel to be injected through the plurality of holes into a gas channel, wherein the gas channel is connected to a wafer processing chamber.