Flowable Carbon Recess Filling via Post-Deposition Annealing
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Solution Overview
Problem
Conventional methods for filling recesses in semiconductor devices with flowable carbon material face challenges such as lack of thermal stability, density, hardness, and etch selectivity, especially as feature sizes decrease, leading to void formation and suboptimal material properties.
Innovation Solution
A method involving the deposition of materials like carbon, silicon oxide, and silicon carbide on a substrate, followed by a post-deposition treatment involving heat or plasma exposure to cause the material to flow and reflow, enhancing thermal stability, hardness, and etch selectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional flowable carbon material deposition techniques are used to fill recesses, then the recesses can be filled with material, but the deposited material lacks desired thermal stability, density, hardness, modulus, and etch selectivity
Solution Approach 1:
The patent applies parameter changes by modifying the deposition conditions (temperature, pressure, gas flow rates) and performing post-deposition annealing at elevated temperatures (e.g., 400-800°C) to transform the carbon material properties. This resolves the contradiction by achieving desired thermal stability and material properties through controlled parameter adjustments during and after deposition.
Solution Approach 2:
The patent uses composite approaches by combining multiple deposition steps with intermediate annealing treatments, creating a multi-layer or multi-stage structure that achieves superior material properties compared to single-step deposition. This resolves the contradiction by integrating multiple processes to achieve both fill capability and desired material characteristics.
2Ease of manufacture
If conventional flowable carbon material deposition techniques are used, then deposition can be performed, but void formation occurs in the deposited material
Solution Approach 1:
The patent applies preliminary action by performing deposition in multiple stages with intermediate annealing steps. Before the final deposition is complete, annealing treatments are applied to promote material flow and eliminate voids. This resolves the contradiction by proactively preventing void formation rather than addressing it after deposition is complete.
Solution Approach 2:
The patent uses periodic action by alternating between deposition steps and annealing steps in a cyclic manner. This periodic cycle of depositing material and then annealing it allows continuous improvement of material density and elimination of voids throughout the deposition process, resolving the contradiction between ease of manufacture and void control.
3Length of moving object
If feature sizes continue to decrease, then device scaling is achieved, but conventional flowable carbon material deposition techniques become increasingly difficult to apply while obtaining desired fill capabilities and material properties
Solution Approach 1:
The patent applies parameter changes by adjusting deposition parameters (lower temperatures, modified gas flows) and annealing parameters (higher temperatures, longer durations) specifically optimized for nanoscale features. This resolves the contradiction by adapting the process parameters to maintain effectiveness at smaller feature sizes where conventional parameters fail.
Solution Approach 2:
The patent replaces reliance on purely mechanical/physical flow of carbon material with a chemically-assisted approach using plasma treatments and controlled annealing that promote material reflow and densification. This substitution resolves the contradiction by using chemical and thermal mechanisms instead of relying solely on material flow, which becomes increasingly difficult to control at nanoscale dimensions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively fills recesses without voids, achieving desired material properties like density and etch selectivity, suitable for applications in electronic devices.
Implementation Method 1
The post-deposition treatment can include heating the substrate (sometimes referred to as annealing) to cause the deposited material to flow. In these cases, the substrate can be heated to a temperature of, for example, about 50° C. to about 800° C.
Implementation Method 2
Additionally or alternatively, the post-deposition treatment can include a plasma treatment. The plasma treatment can include, for example, exposing inert gas and/or a nitrogen-containing gas to a plasma.
Implementation Method 3
The step of depositing material includes flowing a precursor into the reaction chamber; and exposing the precursor to a plasma to form deposited material.
Data Source
AI summary
Methods and systems for forming a structure and structures formed using the methods or systems are disclosed. Exemplary methods include depositing material on a surface of the substrate and treating the deposited material to form treated material. The methods can be used to fill recesses on a surface of a substrate.