Flowable CVD Insulating Layer for Via Protrusion Uniformity
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Solution Overview
Problem
Conventional chemical vapor deposition (CVD) layers in semiconductor devices exhibit poor step coverage, leading to variations in through electrode protruding length and increased risk of warpage or breakage during planarization, which decreases production yield.
Innovation Solution
The use of flowable chemical vapor deposition (FCVD) to form a lower insulating layer over the through electrode, providing improved step coverage and uniformity, and allowing for stable protrusion and planarization without high-temperature processes that can cause thermal stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional chemical vapor deposition (CVD) is used to form an insulating layer, then the deposition process is simple and fast, but the step coverage is poor causing non-uniform thickness and electrode protrusion variation
Solution Approach 1:
The patent changes the deposition parameters by using flowable CVD instead of conventional CVD. This involves controlling the precursor flow rate, temperature, and pressure conditions to achieve a flowable state during deposition, which enables the material to conformally coat the through electrode surfaces and fill gaps, thereby improving step coverage and uniformity without significantly increasing process complexity
Solution Approach 2:
The patent replaces the conventional CVD mechanical deposition process with flowable CVD, which utilizes the flowable property of the deposited material. The material is deposited in a semi-liquid state that can flow to cover vertical surfaces uniformly, substituting the line-of-sight mechanical deposition of conventional CVD with a flow-driven conformal coating mechanism
2Reliability
If conventional CVD is used, then the deposition speed is high, but the through electrode protruding length varies causing warpage or breakage during planarization
Solution Approach 1:
The patent modifies deposition parameters to achieve flowable CVD conditions, where the deposited material maintains a flowable state during the process. This allows the material to self-level and conformally coat the through electrode, ensuring uniform protruding length and preventing warpage or breakage during subsequent planarization, while maintaining acceptable deposition speeds
3Reliability
If high-temperature CVD processes are used, then the deposition is fast, but thermal stress causes warpage or breakage of through electrodes
Solution Approach 1:
The patent changes the temperature parameter by using low-temperature flowable CVD instead of high-temperature conventional CVD. The deposition is performed at temperatures that prevent thermal stress and warpage of through electrodes, while the flowable nature of the deposit ensures sufficient coverage and uniformity are achieved even at lower temperatures
Solution Approach 2:
The patent substitutes thermal-driven deposition with flowable deposition mechanics. Instead of relying on high temperature to facilitate material transport and deposition, the process uses the flowable property of the deposited material to achieve conformal coverage, thereby eliminating thermal stress-related defects
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
FCVD enables stable support and uniformity of through electrodes, reducing the risk of warpage or breakage during planarization and improving production yield by maintaining thermal stability and reducing thermal stress.
Implementation Method 1
performing flowable chemical vapor deposition to form a first lower insulating layer over the second surface
Data Source
AI summary
In one embodiment, the method includes forming a conductive via structure in a base layer. The base layer has a first surface and a second surface, and the second surface is opposite the first surface. The method further includes removing the second surface of the base layer to expose the conductive via structure such that the conductive via structure protrudes from the second surface, and forming a first lower insulating layer over the second surface such that an end surface of the conductive via structure remains exposed by the first lower insulating layer.