Flowable Dielectric Deposition via Dual Plasma Regions
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Solution Overview
Problem
Conventional semiconductor processing systems face challenges in filling narrow gaps with dielectric materials due to void formation and high film stress, particularly with high reflow temperature materials like SiO2, which consume a significant thermal budget, and low viscosity flowable materials like spin-on glass that shrink significantly during curing, leading to delamination issues.
Innovation Solution
A substrate processing system with a processing chamber partitioned into a first plasma region and a second plasma region, where a process gas is excited in the first region and delivered through a showerhead to interact with a silicon-containing gas in the second region, forming a film on the substrate while minimizing organic content and reducing film stress, and a treatment gas is used to remove undesirable components during deposition and cleaning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If high reflow temperature dielectric materials like SiO2 are used to fill narrow gaps, then void formation is reduced, but thermal budget is significantly consumed
Solution Approach 1:
The patent changes the deposition parameters by using plasma-enhanced chemical vapor deposition (PECVD) at lower temperatures (300-450°C) compared to conventional CVD or reflow processes. This allows complete gap filling without consuming significant thermal budget, resolving the contradiction between gap filling completeness and thermal budget consumption
Solution Approach 2:
The patent deposits composite dielectric films comprising silicon oxide and organic compounds (such as silane-based precursors) that provide both gap-filling capability and flowability at lower temperatures. The organic components enable the film to flow and fill voids during deposition without requiring high-temperature reflow
2Manufacturing precision
If low viscosity flowable materials like spin-on glass are used to fill gaps, then gap filling capability is improved, but film shrinkage during curing increases leading to delamination
Solution Approach 1:
The patent changes the material parameters by using organo-silane precursors with controlled viscosity and organic content that provide adequate flowability for gap filling without excessive shrinkage during curing. The deposition conditions (temperature, pressure, gas flow rates) are optimized to achieve complete gap filling while maintaining film integrity and adhesion
Solution Approach 2:
The patent creates local quality variations within the dielectric film by controlling the distribution of organic compounds during deposition. The film has higher organic content in regions requiring flowability for gap filling, while maintaining overall structural integrity. This localized composition control allows gap filling without excessive shrinkage-induced delamination
3Strength
If organic content is increased to maintain surface mobility and reduce shrinkage, then film stress and delamination are reduced, but deposition uniformity may be compromised
Solution Approach 1:
The patent implements process monitoring and feedback control by measuring deposition rate, film thickness, and uniformity in real-time during PECVD. Based on this feedback, deposition parameters (power, pressure, gas flow) are dynamically adjusted to maintain uniform film deposition while preserving adequate organic content for film integrity and reduced shrinkage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables uniform film deposition and reduced film stress by maintaining high surface mobility and organic content, effectively filling gaps without significant shrinkage and delamination, while also allowing for efficient chamber cleaning and maintenance.
Implementation Method 1
forming a first plasma in the first plasma region
Implementation Method 2
depositing the dielectric material on the substrate to form a dielectric layer. One or more reactants excited by the first plasma are used in the deposition
Implementation Method 3
curing the dielectric layer by forming a second plasma in the second plasma region, wherein one or more carbon-containing species is removed from the dielectric layer
Implementation Method 4
A showerhead 952 is positioned below the first plasma region 983. The showerhead 952 distributes the precursors
Data Source
AI summary
Methods of depositing and curing a dielectric material on a substrate are described. The methods may include the steps of providing a processing chamber partitioned into a first plasma region and a second plasma region, and delivering the substrate to the processing chamber, where the substrate occupies a portion of the second plasma region. The methods may further include forming a first plasma in the first plasma region, where the first plasma does not directly contact with the substrate, and depositing the dielectric material on the substrate to form a dielectric layer. One or more reactants excited by the first plasma are used in the deposition of the dielectric material. The methods may additional include curing the dielectric layer by forming a second plasma in the second plasma region, where one or more carbon-containing species is removed from the dielectric layer.