Flowable Film Gap Fill Using Pulsed Plasma Frequency Control
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Solution Overview
Problem
In semiconductor manufacturing, the gap-fill process using flowable films faces challenges in achieving uniform filling height and speed across gaps with varying sizes, leading to inefficiencies and increased process time due to differences in critical dimension and internal volume.
Innovation Solution
A substrate processing method involving a pulsed plasma atmosphere with an execution pulse frequency lower than a reference pulse frequency is used to fill gaps with a flowable film, optimizing the filling height and speed uniformity by adjusting the pulse frequency to reduce differences between gaps of varying cross-sectional diameters and internal volumes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a flowable film is formed on a substrate with pattern structures of various line widths, then the gaps between pattern structures can be filled, but the filling height uniformity deteriorates due to varying gap sizes
Solution Approach 1:
The patent applies pulsed plasma deposition with periodic on/off cycles to control the filling process. By using pulsed plasma instead of continuous plasma, the deposition occurs in controlled intervals, allowing the flowable film to be deposited uniformly across gaps of various sizes. The pulse frequency and duty cycle are optimized to ensure that smaller gaps fill at a similar rate to larger gaps, improving filling height uniformity across the substrate.
2Reliability
If the gap-fill process is performed to fill all gaps, then complete filling is achieved, but the process time increases due to varying filling speeds in different sized gaps
Solution Approach 1:
The pulsed plasma deposition enables the process to be stopped and restarted periodically, allowing optimization of deposition conditions for different gap sizes. The periodic plasma on/off cycles create conditions where smaller gaps can fill more quickly during certain phases while larger gaps continue to fill during other phases, reducing the overall time required to achieve complete filling of all gaps.
3Productivity
If conventional plasma deposition is used, then the process is simple, but the filling speed varies significantly across gaps of different sizes
Solution Approach 1:
The patent introduces pulsed plasma deposition with controllable pulse frequency and duty cycle parameters. This periodic action allows independent control of deposition rates for different gap sizes without requiring complex additional hardware. The pulse parameters can be adjusted to optimize filling speed uniformity, achieving better productivity while maintaining relatively simple process equipment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances filling height uniformity and reduces process time by adjusting the pulse frequency, minimizing the difference in filling speeds and heights across gaps, thereby improving the efficiency of the gap-fill process and reducing excessive deposition.
Implementation Method 1
filling the first gap and the second gap with a flowable film under a pulsed plasma atmosphere, while supplying a precursor and a reactant gas to the reaction space
Implementation Method 2
filling the first gap and the second gap with a flowable film under a pulsed plasma atmosphere, while supplying a precursor and a reactant gas to the reaction space
Data Source
AI summary
A substrate processing method includes providing, in a reaction space, a substrate including two gaps in a surface thereof, and filling the at least two gaps with a flowable film under a pulsed plasma atmosphere, while supplying a precursor and a reactant gas to the reaction space, wherein a difference of filling heights of the flowable film filled in the at least two gaps, between the at least two gaps, is reduced by adjusting a pulse frequency of pulsed plasma.