Flowable Gap Fill With Microwave Plasma Cure for Void-Free Films
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in filling small gaps and trenches with high aspect ratios due to void formation, thermal instability, and poor quality of films, particularly in SiCN and SiN deposition, which affects device yield and performance.
Innovation Solution
A method involving a cyclic process of flowable deposition and microwave plasma cure, where a substrate undergoes alternating temperature treatments and exposure to microwave plasma in a multi-process chamber module, ensuring void-free and high-quality film deposition by maintaining a shared pressure system and using specific gas sources like Ar, H2, and NH3.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional vapor deposition is used to fill gaps, then deposition can be performed, but voids form in the film and quality deteriorates
Solution Approach 1:
The patent changes the physical and chemical parameters of the deposition process by introducing microwave plasma activation. This transforms the conventional vapor deposition into a plasma-enhanced process, altering the reactivity and flow characteristics of the deposited material to eliminate voids while maintaining high film quality.
Solution Approach 2:
The patent creates a composite process combining vapor deposition with microwave plasma treatment. The resulting film exhibits composite characteristics - the structural integrity from vapor deposition combined with the void-free density from plasma activation, achieving superior film quality without void formation.
2Stability of the object's composition
If high temperature annealing is applied to improve film stability, then thermal stability improves, but substrate damage and shrinkage occur
Solution Approach 1:
The patent replaces the conventional thermal annealing mechanism with a microwave plasma activation mechanism. Instead of using high temperature thermal energy to stabilize the film, microwave electromagnetic energy activates the plasma, which then chemically stabilizes the film structure at lower temperatures, avoiding substrate damage.
Solution Approach 2:
The patent utilizes the phase transition of materials under microwave plasma conditions. The microwave energy induces plasma phase transitions that activate chemical reactions to stabilize the film structure, achieving thermal stability without requiring high-temperature phase transitions that would damage the substrate.
3Manufacturing precision
If cyclic deposition and plasma cure process is implemented, then void-free film quality is achieved, but process complexity increases
Solution Approach 1:
The patent merges the deposition and plasma cure steps into an integrated cyclic process within a single reactor system. By combining these operations and automating the cycling between them, the system achieves void-free film quality while managing process complexity through consolidation rather than separate standalone processes.
Solution Approach 2:
The patent implements periodic cycling between deposition and plasma cure modes. This periodic action automatically alternates between the two processes, achieving void-free films through repeated cycles while reducing operator complexity through automated sequence control. The cyclic nature allows each layer to be deposited and then activated in turn, systematically eliminating voids throughout the film.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively fills gaps without voids, enhances film quality, and improves thermal stability, reducing wet etch rates and post-annealing shrinkage, thereby increasing device yield and performance.
Implementation Method 1
exposing the substrate to a microwave plasma generated from a plasma gas source
Implementation Method 2
the plasma comprises one or more of Ar, H2, H, N, or H2
Implementation Method 3
heating a surface of the substrate to a second temperature in the second station
Implementation Method 4
depositing a flowable material on the substrate in the first station by a vapor deposition process
Data Source
AI summary
In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments relate to cyclical processes for gap-fill in which deposition is followed by a microwave plasma curing treatment and repeated. In some embodiments, the deposition and microwave plasma curing treatment are carried out in separate stations. In some embodiments, a second station is heated to a higher temperature than a first station. In some embodiments, a separate module is used for high temperature curing.