Flowable Gap-Fill Deposition With Continuous Pumping
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Solution Overview
Problem
In semiconductor manufacturing, the formation of flowable films in gaps with varying critical dimensions (CD) on substrates leads to unstable and non-uniform film characteristics due to varying flowable properties, resulting in challenges in filling high aspect ratio gaps without voids and achieving uniform filling heights.
Innovation Solution
A substrate processing method involving the repeated supply and pumping of precursor and reactant gases in a reaction space, with intermittent deposition and continuous pumping, adjusts the pressure and flowable film formation to reduce height and speed differences between gaps of varying cross-sectional diameters, optimizing filling uniformity and process time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If continuous supply of precursor and reactant gas is used for flowable film formation, then filling speed is maintained, but filling height uniformity across gaps of varying CD sizes deteriorates
Solution Approach 1:
The patent applies periodic action by intermittently supplying precursor and reactant gases during the flowable film formation process. The gas supply is turned on and off at specific intervals, creating periodic deposition cycles. This periodic supply allows gaps of different CD sizes to fill at different rates during the 'on' periods, while the 'off' periods allow pressure equalization and flow redistribution, ultimately achieving uniform filling heights across all gaps despite their varying dimensions.
2Productivity
If gas supply is increased to accelerate filling, then productivity improves, but process stability and film uniformity worsen
Solution Approach 1:
The periodic gas supply creates controlled deposition cycles that maintain process stability. During the 'on' periods, gas is supplied at optimized rates to ensure steady film formation without excessive pressure buildup. The 'off' periods allow the reaction space to depressurize and redistribute materials uniformly. This periodic modulation enables high productivity through continuous cycling while maintaining reliability through controlled, repeatable cycles that prevent runaway reactions or pressure instability.
Solution Approach 2:
The patent employs dynamic control of gas supply parameters, adjusting the timing and duration of precursor and reactant gas supply based on process requirements. The gas supply conditions are dynamically modulated between active deposition phases and pause phases, allowing the system to adapt to the varying needs of gaps with different CD sizes and aspect ratios, thereby maintaining both high productivity and process stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances filling height uniformity and reduces process time by adjusting the filling speed and height differences between gaps, minimizing voids and over-deposition, while improving the efficiency and accuracy of the gap-fill process.
Implementation Method 1
filling the first gap and the second gap with a flowable film while supplying a precursor and a reactant gas to the reaction space
Implementation Method 2
pumping the reaction space
Data Source
AI summary
A method of processing a substrate is disclosed, the method including: providing a substrate to a reaction space, the substrate having at least two gaps on a surface of the substrate, and depositing a flowable film in the at least two gaps while supplying a precursor and a reactant gas into the reaction space, wherein the depositing is discontinuously performed while a pumping operation for the reaction space is continuously maintained.