Multi-step process for flowable gap-fill film
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Solution Overview
Problem
Current semiconductor processing technologies face challenges in reliably producing nanometer and smaller features for VLSI and ULSI devices, as materials and processes used for larger dimensions are not suitable for smaller gaps, leading to poor film quality and non-uniformity, especially in high aspect ratio gaps.
Innovation Solution
A semiconductor processing system and method that includes a multi-pressure processing chamber capable of performing multiple processes, such as stabilizing and densifying flowable films deposited on substrates, using a combination of high and low pressure environments and specific process gases to improve film density and uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional processes are used to fill gaps at larger dimensions, then gap filling is achieved, but the process is not suitable for smaller dimensions leading to poor film quality and non-uniformity
Solution Approach 1:
The conventional single-step process is segmented into multiple sequential processes: deposition of flowable film, stabilizing bonds process, and densifying process. Each process targets specific film properties, with the stabilizing process addressing bond strength and the densifying process addressing film density and uniformity, thereby achieving high manufacturing precision for small dimension gaps
Solution Approach 2:
The patent applies parameter changes by utilizing multi-pressure environments (high pressure and low pressure) during different process steps. The stabilizing bonds process and densifying process are performed under different pressure conditions to optimize film properties, enabling the process to adapt to smaller dimensions while maintaining film quality and uniformity
2Manufacturing precision
If multiple processes are performed in separate chambers, then film stabilization and densification are achieved, but processing time and system complexity increase
Solution Approach 1:
The patent merges the stabilizing bonds process and densifying process into a single multi-pressure processing chamber. The chamber can switch between high pressure and low pressure environments to perform both processes sequentially on the same substrate without requiring physical transfer between chambers, thereby reducing processing time while maintaining film quality
Solution Approach 2:
The processing chamber is designed with multi-functionality, capable of performing deposition, stabilizing bonds, and densifying processes under different pressure conditions. This universal chamber eliminates the need for multiple specialized chambers, reducing both processing time and system complexity while achieving the required film density and uniformity
3Productivity
If flowable film is deposited without subsequent stabilization and densification, then processing steps are reduced, but film quality and electrical characteristics deteriorate
Solution Approach 1:
The patent applies preliminary action by performing stabilizing bonds and densifying processes immediately after film deposition within the same processing cycle. These preliminary treatments ensure the film achieves optimal bond strength and density before subsequent processing, guaranteeing reliable electrical characteristics without adding significant processing time
Solution Approach 2:
The stabilizing and densifying processes utilize parameter changes (pressure transitions) to transform the as-deposited film into a high-quality film with reliable electrical characteristics. The high pressure environment during densification compresses the film structure, while the stabilizing process strengthens bonds, both critical for electrical performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution enhances film quality by achieving a more uniform and controlled etch rate, reducing processing time and costs, and improving electrical characteristics of semiconductor devices.
Implementation Method 1
The first process includes stabilizing bonds in the film to form a stabilized film
Implementation Method 2
The second process includes densifying the stabilized film
Data Source
AI summary
Generally, examples described herein relate to methods and processing systems for performing multiple processes in a same processing chamber on a flowable gap-fill film deposited on a substrate. In an example, a semiconductor processing system includes a processing chamber and a system controller. The system controller includes a processor and memory. The memory stores instructions, that when executed by the processor cause the system controller to: control a first process within the processing chamber performed on a substrate having thereon a film deposited by a flowable process, and control a second process within the process chamber performed on the substrate having thereon the film. The first process includes stabilizing bonds in the film to form a stabilized film. The second process includes densifying the stabilized film.