Flowable Oxide Film Tunable Wet Etch Rate

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Solution Overview

Problem

Existing semiconductor processing technologies face challenges in filling high aspect ratio gaps with insulating material due to limitations in deposition processes, particularly as device geometries shrink and thermal budgets are reduced, leading to difficulties in achieving void-free filling of narrow width, high aspect ratio features.

Innovation Solution

The development of integration-compatible dielectric films with tunable properties, such as wet etch rates, is achieved through the deposition and modification of flowable dielectric films using methods like plasma exposure, ultraviolet radiation, thermal anneal, and microwave exposure, allowing for targeted film properties and post-deposition treatments to enhance filling capabilities.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If existing deposition processes are used to fill high aspect ratio gaps, then the process is simple and well-established, but void-free filling becomes increasingly difficult as aspect ratio increases

Engineering Contradiction:

Improvevoid-free filling qualityVSAvoiddeposition process complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent changes the physical and chemical parameters of the dielectric material by incorporating organic compounds during deposition. This creates a flowable dielectric with modified rheological properties that enables it to flow into and fill high aspect ratio gaps completely, achieving void-free filling while maintaining process simplicity

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent uses composite dielectric materials containing organic compounds mixed with inorganic dielectric precursors. This composite approach creates a flowable material with both the desired dielectric properties and enhanced flow characteristics necessary for filling narrow, high aspect ratio features without requiring complex deposition equipment

Inventive Principle:

Principle #40Composite materials

2Productivity

If device geometries are shrunk to increase integration density, then more devices can be packed, but thermal budgets are reduced making filling even more difficult

Engineering Contradiction:

Improveintegration densityVSAvoidthermal budget

Core Design Contradiction:

ProductivityVSTemperature

Solution Approach 1:

The patent modifies the deposition and processing parameters to occur at lower temperatures. The flowable dielectric formulation and deposition conditions are specifically designed to work within reduced thermal budgets, enabling void-free filling of scaled geometries without exceeding temperature constraints that would damage underlying device structures

Inventive Principle:

Principle #35Parameter changes

3Manufacturing precision

If flowable dielectric films with tunable properties are deposited and modified, then filling capability is enhanced, but additional treatment processes are required

Engineering Contradiction:

Improvefilling capabilityVSAvoidintegration process complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent combines multiple functions into integrated treatment processes. For example, plasma treatments simultaneously perform dielectric conversion, densification, and organic compound removal. Thermal annealing processes concurrently complete the chemical conversion and adjust the mechanical properties, reducing the number of separate process steps while achieving the desired film properties

Inventive Principle:

Principle #5Merging (Combining)

4Adaptability or versatility

If wet etch rate is tuned during integration, then selectivity and control are improved, but additional treatment steps are needed

Engineering Contradiction:

Improveetch rate tunabilityVSAvoidprocess step complexity

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent achieves wet etch rate tuning by modifying the chemical composition parameters of the dielectric film through controlled incorporation of organic compounds and subsequent treatment. The organic content and its distribution are adjusted to provide desired etch selectivity, allowing the same material system to provide different etch rates for different process needs without requiring entirely different dielectric materials

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables consistent and efficient filling of high aspect ratio gaps with insulating material, improving the integration process by allowing for tunable film properties that can be modified during integration, thereby addressing the limitations of existing deposition processes.