Flowable Silicon Film Co-Deposition for Void-Free Gap Fill
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Solution Overview
Problem
Flowable films deposited at lower temperatures face challenges with high film stress and voiding due to high temperature and energy post-treatment, which complicates achieving desirable film properties such as low wet etch rate and high film quality.
Innovation Solution
The method involves co-depositing two silicon precursor compounds, one with unsaturated carbon bonds and the other with Si-H bonds, to form a flowable oligomer that fills surface features, followed by thermal or UV treatment to densify the film, reducing voids and stress while maintaining film quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional silane sources are used in CVD processes, then silicon-containing films can be deposited, but the process requires high temperatures (700-900°C) and produces harmful byproducts
Solution Approach 1:
The patent changes the chemical parameters of the deposition process by using alternative silane sources (such as tetraethyl orthosilicate or methyl silane) with different decomposition characteristics. These modified silane sources allow deposition at lower temperatures (400-700°C) and produce different decomposition byproducts that are less harmful or can be more easily managed, thus resolving the contradiction between temperature requirements and harmful byproduct generation.
2Productivity
If high temperature CVD is used to deposit silicon-containing films, then film deposition is achieved, but the process is time-consuming and requires precise thickness control
Solution Approach 1:
The patent employs dynamic control of deposition parameters including gas flow rates, temperature, and pressure during the CVD process. By dynamically adjusting these parameters, the process achieves both high deposition rates and precise thickness control. The system can rapidly deposit films while maintaining accurate thickness uniformity through real-time parameter optimization, resolving the contradiction between productivity and manufacturing precision.
3Reliability
If multiple deposition steps are used to create complex film structures, then desired film properties are achieved, but the process complexity increases
Solution Approach 1:
The patent uses composite silane sources that contain multiple functional groups or combined chemical functionalities within a single precursor molecule. This allows the deposition of complex film structures with multiple properties (such as hardness, flexibility, and chemical resistance) in a single deposition step or with fewer steps, thereby maintaining film structure quality while reducing process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in silicon-containing films with controlled tensile stress and density, achieving seamless and void-free gap-fill with improved film properties, including reduced voiding and enhanced etch resistance.
Implementation Method 1
chemical vapor deposition (CVD) process
Data Source
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AI summary
Described herein are compositions and methods using same for forming a silicon- containing film such as without limitation a silicon carbide, silicon nitride, silicon oxide, silicon oxynitride, a carbon-doped silicon nitride, a carbon-doped silicon oxide, or a carbon doped silicon oxynitride film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using the co-deposition of a first compound comprising a carbon-carbon double or carbon-carbon triple bond and a second compound comprising at least one Si-H bond.