Flowable Silicon Dioxide Deposition for High Aspect Ratio Gap Filling
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Solution Overview
Problem
The miniaturization of integrated circuits leads to high aspect ratio gaps and trenches, making it difficult to fill them with dielectric materials like silicon oxide without creating voids or seams, which results in inconsistent film deposition and inferior device performance due to electrical crosstalk and charge leakage.
Innovation Solution
A method involving the remote generation of atomic oxygen and a silicon precursor in a deposition chamber, where they react to form a highly flowable silicon oxide layer that can fill high aspect ratio gaps without voids or seams, followed by an annealing process to drive out moisture and improve film quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the deposition rate is increased to improve productivity, then the deposition time is reduced, but voids and seams form in the dielectric layer
Solution Approach 1:
The patent changes the chemical parameters of the deposition process by using specific precursors (silane or methylsilane with water vapor) and controlling the deposition temperature (200-400°C) to achieve a deposition rate of 50-200 nm/min. This parameter optimization allows high-rate deposition while maintaining film uniformity and preventing void formation through controlled reaction kinetics.
Solution Approach 2:
The patent creates local quality differences in the dielectric film by controlling the deposition conditions to achieve varying densities and flowability characteristics at different stages of the deposition process. The use of water vapor in the precursor mix creates localized Si-OH bonds that enhance flowability in regions where voids might form, while maintaining overall film uniformity.
2Stability of the object's composition
If water vapor is added to increase the flowability of the dielectric material, then void filling is improved, but the density and dielectric properties of the deposited film deteriorate
Solution Approach 1:
The patent applies partial action by adding water vapor in controlled, limited amounts to the precursor mix rather than in excess. This controlled addition provides just enough Si-OH bonding to enhance flowability and fill voids during deposition, while avoiding excessive water content that would compromise film density and dielectric properties. The water vapor concentration is optimized to achieve the minimum necessary for void prevention.
Solution Approach 2:
The patent optimizes the water vapor concentration parameter in the precursor mix and controls the deposition temperature (200-400°C) to balance flowability and density. By precisely controlling these parameters, the process achieves enhanced flowability for void filling while maintaining film density and dielectric properties through controlled reaction conditions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the deposition of voidless, seamless dielectric films with high flowability and density, maintaining high deposition rates while ensuring the quality of the finished fill, reducing electrical noise and improving device performance.
Implementation Method 1
Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
Implementation Method 2
The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate
Implementation Method 3
generating an atomic oxygen precursor outside the deposition chamber
Implementation Method 4
generating an atomic oxygen precursor from a dissociation of molecular oxygen in a high-density argon plasma
Implementation Method 5
annealing the deposited silicon oxide layer
Data Source
AI summary
Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.