Flowable Silicon Film Precursors With Lower Si-H Bond Density
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Solution Overview
Problem
Flowable oxide films deposited from trisilylamine in gas phase polymerization processes have high Si—H bond density, leading to faster wet etch rates in dilute HF solutions, necessitating alternative precursor compounds to reduce Si—H bond density and etch rates.
Innovation Solution
The use of siloxane, trisilylamine-based, organoaminodisilane, and cyclosilazane compounds with specific structures and delivery methods in flowable chemical vapor deposition processes to deposit silicon-containing films with reduced Si—H content and controlled oligomerization, minimizing film shrinkage and tensile stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If trisilylamine is used as precursor in gas phase polymerization, then silicon-containing film can be deposited, but Si—H bond density becomes high leading to fast wet etch rates
Solution Approach 1:
The patent changes the chemical composition parameters of the precursor by using siloxane compounds with specific Si—O—Si linkages instead of traditional trisilylamine. This parameter change directly reduces the Si—H bond density in the deposited film, thereby controlling the wet etch rate while maintaining film deposition capability
Solution Approach 2:
The invention employs composite precursor formulations containing siloxane compounds combined with other silicon-containing compounds. This composite approach allows optimization of film properties including reduced Si—H content, controlled etch rates, and maintained deposition efficiency through synergistic interactions between different precursor components
2Stability of the object's composition
If conventional precursors are used, then deposition can proceed, but film shrinkage and tensile stress increase
Solution Approach 1:
The patent modifies the precursor molecular structure parameters by introducing siloxane compounds with Si—O—Si linkages. This structural parameter change results in films with reduced shrinkage and tensile stress during deposition and subsequent processing, improving dimensional control and film stability
Solution Approach 2:
The invention introduces specific local chemical structures (Si—O—Si linkages) within the precursor molecules that create localized regions of reduced stress and shrinkage. These local structural modifications propagate through the film formation process to reduce overall film stress and improve dimensional stability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach results in silicon-containing films with lower Si—H bond density, reduced wet etch rates, and improved film properties, such as enhanced flowability and ease of oxidation, effectively addressing the limitations of prior art.
Implementation Method 1
the water within the mixture can react with the alkoxysilanes to hydrolyze the alkoxide and/or aryloxide groups
Implementation Method 2
generate silanol species, which further condense with other hydrolyzed molecules and form an oligomeric or network structure
Implementation Method 3
flowable chemical vapor deposition processes to deposit silicon-containing films
Implementation Method 4
vapor deposition processes using water and a silicon containing vapor source for flowable dielectric deposition (FCVD)
Implementation Method 5
the dielectric precursor condenses and subsequently reacts with the oxidant to form dielectric material
Implementation Method 6
reacts with the oxidant to form the dielectric material
Data Source
AI summary
Compositions for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the composition comprises at least one compound is selected from the group consisting of a siloxane, a trisilylamine-based compound, and a cyclic trisilazane compound.