Multi-Station Gas Flowpath Conductance Matching by Thermal Adjustment
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Solution Overview
Problem
Variations in flow conductance of flowpaths in multi-station semiconductor processing tools lead to non-uniform deposition of materials on substrates, affecting properties such as thickness and refractive index, due to manufacturing tolerances and inherent variabilities.
Innovation Solution
Adjusting the temperature of flow elements within the flowpaths to control and match the flow conductance, using heating or cooling mechanisms, such as resistive heaters or fluid conduits, to achieve uniform deposition across multiple stations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If flowpaths are manufactured with standard tolerances, then manufacturing cost and complexity are reduced, but flow conductance varies between flowpaths causing non-uniform deposition
Solution Approach 1:
The patent changes the temperature parameter of flow elements to adjust flow conductance. By heating or cooling flow elements, the system compensates for manufacturing variations in flowpath conductance, enabling uniform deposition without requiring extremely precise manufacturing tolerances.
Solution Approach 2:
The patent replaces mechanical adjustment mechanisms (such as movable valves or adjustable flow restrictors) with thermal control mechanisms. Temperature control units heat or cool flow elements to modify flow conductance, substituting a thermal field for a mechanical adjustment system.
2Manufacturing precision
If flow conductance is independently controlled for each flowpath, then deposition uniformity is improved, but device complexity and control difficulty increase
Solution Approach 1:
The patent divides the gas delivery system into multiple independent flowpaths, each with its own temperature control unit. This segmentation allows independent control of flow conductance for each flowpath, enabling precise adjustment to achieve uniform deposition across multiple stations.
Solution Approach 2:
The system employs feedback control where deposition measurements from various stations are used to adjust temperature control settings. The controller modifies flow conductance parameters based on measured deposition uniformity, creating a closed-loop system that automatically optimizes deposition consistency.
3Manufacturing precision
If temperature control units are added to flowpaths, then flow conductance can be adjusted for uniform deposition, but energy consumption and system complexity increase
Solution Approach 1:
The patent implements dynamic temperature control where heating or cooling is applied only when and where needed to maintain optimal flow conductance. The system adjusts temperature in real-time based on process conditions and deposition requirements, rather than maintaining constant high energy input.
Solution Approach 2:
The system uses small, precise temperature adjustments rather than large continuous heating. By making fine-tuned parameter changes to flow element temperatures, the system achieves flow conductance control with minimal energy consumption.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances station-to-station matching of deposited material properties by independently controlling flow conductance, reducing non-uniformity and improving within-wafer uniformity and wafer-to-wafer repeatability.
Implementation Method 1
The temperature control unit may be controllable to change, via a temperature change, the flow conductance of the flow element with which it is in thermal contact
Implementation Method 2
the heating element may include a resistive heating element, a thermoelectric heater
Data Source
AI summary
Methods and apparatuses are provided herein for independently adjusting flowpath conductance. One multi-station processing apparatus may include a processing chamber, a plurality of process stations in the processing chamber that each include a showerhead having a gas inlet, and a gas delivery system including a junction point and a plurality of flowpaths, in which each flowpath includes a flow element, includes a temperature control unit that is thermally connected with the flow element and that is controllable to change the temperature of that flow element, and fluidically connects one corresponding gas inlet of a process station to the junction point such that each process station of the plurality of process stations is fluidically connected to the junction point by a different flowpath.


