Fluid Head Layout for Uniform Plasma Film Deposition
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Solution Overview
Problem
Conventional metal organic chemical vapor deposition methods result in non-uniform film thickness distribution on substrates due to uneven concentration of organometallic gas, leading to difficulties in controlling film thickness uniformity.
Innovation Solution
A film forming apparatus with a fluid head that includes separate plasma and gas flow paths, featuring dispersively arranged outflow ports for uniform distribution of active species and organometallic gas, along with a heater positioned to minimize thermal decomposition and enhance plasma generation efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the organometallic gas flows from the outer peripheral side toward the inside of the substrate, then the gas supply structure is simple, but the concentration of the organometallic gas becomes high at the outer peripheral portion and low at the central portion, making it difficult to control film thickness uniformity
Solution Approach 1:
The gas supply structure is segmented into multiple independent gas supply ports arranged in a specific pattern. The organometallic gas is supplied through multiple ports rather than a single peripheral source, allowing independent control of gas flow to different regions of the substrate. This segmentation enables uniform distribution of organometallic gas concentration across the substrate surface, resolving the film thickness uniformity issue while maintaining reasonable structural complexity.
2Productivity
If the organometallic gas concentration is increased to improve film formation rate, then productivity increases, but the film thickness uniformity deteriorates due to excessive concentration at outer peripheral portions
Solution Approach 1:
Different regions of the substrate receive tailored gas supply through specifically positioned gas supply ports. The multi-port arrangement ensures that each region (central and peripheral) receives appropriate organometallic gas concentration, allowing high overall productivity while maintaining uniform film thickness across the entire substrate surface.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus achieves more uniform film thickness by ensuring even distribution of active species and organometallic gas, reducing thermal decomposition, and enhancing plasma generation, resulting in efficient and uniform film formation on substrates.
Implementation Method 1
a plasma source that plasmatizes the first source gas in the plasma chamber; a plurality of first outflow ports that communicate with the plasma chamber, and are two-dimensionally dispersively arrayed in an overlapping region overlapping with the first main surface of the substrate in plan view, and allow active species generated by plasmatization of the first source gas to flow out toward the first main surface of the substrate
Implementation Method 2
a heater that heats the substrate from a second main surface side of the substrate
Implementation Method 3
a plurality of first outflow ports that communicate with the plasma chamber, are two-dimensionally dispersively arrayed in an overlapping region overlapping with the first main surface of the substrate in plan view, and allow active species generated by plasmatization of the first source gas to flow out toward the first main surface of the substrate
Data Source
AI summary
A film forming apparatus includes a chamber, a mounting table, and a fluid head. The fluid head is provided at a position facing the first main surface of the substrate in the chamber. The fluid head includes a plasma chamber, a plasma source, first outflow ports, a gas flow path, and second outflow ports. The plasma source plasmatizes the first source gas in the plasma chamber. The first outflow ports are dispersively arrayed in an overlapping region overlapping the first main surface in plan view. The active species derived from the first source gas flows out from the first outflow ports toward the first main surface of the substrate W. The plurality of second outflow ports are dispersively arrayed at positions different from the first outflow ports in the overlapping region. The second source gas flows out from the second outflow ports toward the first main surface.