Fluidized Bed Evaporator for Semiconductor Precursor Vaporization

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Solution Overview

Problem

Existing semiconductor processing systems face inefficiencies in vaporizing solid or liquid precursor materials due to inadequate surface area and poor carrier gas/source material contact time, leading to suboptimal vaporization and deposition processes, especially for three-dimensional substrates requiring large precursor volumes.

Innovation Solution

A fluidized bed evaporator system is employed, where a high flow rate of gas suspends and stirs solid particles to create a fluidized bed, enhancing the surface area for vaporization and efficiently transferring heat to convert non-gaseous precursors into vapor phase, which is then deposited onto substrates.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of moving object

If a conventional evaporation apparatus is used to vaporize solid or liquid precursor material, then the apparatus structure is simple, but the surface area of source material is insufficient and carrier gas contact time is poor

Engineering Contradiction:

Improvesurface area of source materialVSAvoidapparatus structure

Core Design Contradiction:

Area of moving objectVSDevice complexity

Solution Approach 1:

The precursor material is divided into many small particles and suspended in the carrier gas stream, creating numerous small evaporation surfaces instead of a single large surface. This segmentation dramatically increases the total surface area available for vaporization while maintaining a relatively simple apparatus structure.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The invention uses carrier gas flow to suspend, transport, and distribute precursor particles through the evaporation zone. The pneumatic system creates intimate contact between carrier gas and precursor material, ensuring sufficient contact time and maximizing vaporization efficiency without complex mechanical structures.

Inventive Principle:

Principle #29Pneumatics and hydraulics

2Productivity

If carrier gas flows quickly through the evaporation apparatus, then the processing speed is high, but the contact time between carrier gas and source material is insufficient

Engineering Contradiction:

Improveprocessing speedVSAvoidcontact time

Core Design Contradiction:

ProductivityVSDuration of action of moving object

Solution Approach 1:

The precursor particles are dynamically suspended and circulated within the carrier gas stream rather than being stationary. This dynamic configuration allows the particles to remain in contact with the carrier gas throughout the evaporation zone, maximizing contact time even at high flow rates and maintaining high processing speed.

Inventive Principle:

Principle #15Dynamics

3Quantity of substance

If a large amount of precursor vapor is needed for batch deposition or three-dimensional substrates, then the deposition quality improves, but the vaporization efficiency of conventional apparatus is insufficient

Engineering Contradiction:

Improveamount of precursor vaporVSAvoidvaporization efficiency

Core Design Contradiction:

Quantity of substanceVSProductivity

Solution Approach 1:

The invention changes the physical parameters of the precursor material by reducing it to fine particles and controlling their suspension in the carrier gas. This parameter change enables much higher vaporization rates and produces sufficient precursor vapor quantity for batch deposition and three-dimensional substrates while maintaining high vaporization efficiency.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The fluidized bed evaporator system significantly improves the efficiency of precursor vaporization, ensuring effective saturation of carrier gases and providing a continuous supply of vapor phase precursors for deposition, even on complex substrates, thereby enhancing the semiconductor processing efficiency.

Implementation Method 1

forming a fluidized bed by flowing gas at a sufficiently high flow rate to suspend and stir a plurality of solid particles

Methodology Applied

Scientific EffectFluidization: Fluidisation

Implementation Method 2

vaporizing the non-gaseous precursor in the fluidized bed

Methodology Applied

Scientific EffectVaporization: Evaporation

Implementation Method 3

efficiently transferring heat to convert non-gaseous precursors into vapor phase

Methodology Applied

Scientific EffectHeat transfer: Conduction (thermal)

Implementation Method 4

transferring the precursor in vapor phase through a passage

Methodology Applied

Scientific EffectAdvection: Advection

Implementation Method 5

performing deposition on one or more substrates with the transferred precursor in vapor phase

Methodology Applied

Scientific EffectPhysical vapor deposition: Physical Vapour Deposition

Data Source

PatentUS8343583B2Method for vaporizing non-gaseous precursor in a fluidized bed

Publication Date: 2013.01.01 ASM INTERNATIONAL NV

AI summary

Methods and systems for depositing a film on a substrate are disclosed. In one embodiment, a method includes converting a non-gaseous precursor into vapor phase. Converting the precursor includes: forming a fluidized bed by flowing gas at a sufficiently high flow rate to suspend and stir a plurality of solid particles, and converting the phase of the non-gaseous precursor into vapor phase in the fluidized bed. The method also includes transferring the precursor in vapor phase through a passage; and performing deposition on one or more substrates with the transferred precursor in vapor phase.