Fluoride Ion Absorbing Layer for Display Panel Insulating Layers
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional deposition methods for insulating layers in semiconductor devices often result in excessive or insufficient accumulation of fluoride ions, which negatively impact the performance of semiconductor devices, necessitating a method to control fluoride ion concentration effectively.
Innovation Solution
A method involving the deposition of a fluoride ion absorbing layer on the inner walls of the deposition chamber before forming the second insulating layer, which reduces fluoride ion concentration by vacuuming out unreacted ions and using materials like silicon oxide, silicon nitride, or bi-layered structures to minimize ion influence on the insulating layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If fluoride ions are used to clean the deposition chamber, then the cleaning effectiveness is improved, but fluoride ion accumulation on the insulating layer surface increases
Solution Approach 1:
A fluoride ion absorbing layer is introduced as an intermediary between the cleaning process and the insulating layer. This absorbing layer captures excess fluoride ions through chemical absorption, preventing them from accumulating on the insulating layer surface while maintaining the cleaning effectiveness of the deposition chamber
2Object-affected harmful factors
If fluoride ion concentration is increased to improve cleaning, then cleaning performance improves, but semiconductor device performance deteriorates
Solution Approach 1:
The fluoride ion absorbing layer serves as a mediator that allows high fluoride ion concentration to be used for effective cleaning while preventing harmful accumulation on the semiconductor structures. The absorbing layer chemically binds excess fluoride ions, decoupling the cleaning performance from device performance degradation
Solution Approach 2:
The harmful fluoride ions that would normally accumulate and degrade device performance are converted into a beneficial cleaning agent. By using a material that preferentially absorbs fluoride ions, the harmful ions are redirected to clean the deposition chamber walls rather than contaminating the insulating layer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces fluoride ion accumulation in the second insulating layer, improving semiconductor device performance by stabilizing threshold voltage and magnetic hysteresis values, as demonstrated by SIMS measurements showing fluoride ion gain ratios within optimal ranges.
Implementation Method 1
a fluoride ion absorbing layer is deposited on inner walls of the deposition chamber before the second insulating layer is formed
Implementation Method 2
a first insulating layer is formed on the semiconductor layer; and a second insulating layer is formed on the first insulating layer
Data Source
AI summary
A display panel is provided, which includes a first substrate, a first insulating layer on the first substrate, a semiconductor layer on the first insulating layer, and a second insulating layer on the semiconductor layer and the first insulating layer. The second insulating layer has a surface in contact with the first insulating layer. The second insulating layer has a first region. The first region has a thickness of 40 nm from the surface of the second insulating layer, and the second insulating layer has a fluoride ion gain ratio of 80% to 95% in the first region.